Datasheet > SMBJ110C-M3/5B

SMBJ110C-M3/5B

更新时间： 2024-11-23 04:00:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	87K
描述
Trans Voltage Suppressor Diode, 600W, 110V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMB, 2 PIN

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中文翻译

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SMBJ110C-M3/5B 数据手册

SMBJ5.0A thru SMBJ188CA

www.vishay.com

Vishay General Semiconductor

Surface Mount TRANSZORB Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 600 W peak pulse power capability with a 10/1000 μs

waveform, repetitive rate (duty cycle): 0.01 %

• Excellent clamping capability

DO-214AA (SMB J-Bend)

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

PRIMARY CHARACTERISTICS

V_WM

5.0 V to 188 V

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

P_PPM

600 W

100 A

_FSM(uni-directional only)

• Halogen-free according to IEC 61249-2-21 definition

T_Jmax.

150 °C

MECHANICAL DATA

Case: DO-214AA (SMBJ)

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, and telecommunication.

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3

- halogen-free, RoHS compliant, and

commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional use C or CA suffix (e.g. SMBJ10CA).

Electrical characteristics apply in both directions.

Polarity: For uni-directional types the band denotes

cathode end, no marking on bi-directional types

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

600

UNIT

(1)(2)

Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)

Peak pulse current with a 10/1000 μs waveform

P_PPM

(1)

I_PPM

See next table

100

(2)

Peak forward surge current 8.3 ms single half sine-wave uni-directional only

Operating junction and storage temperature range

I_FSM

T_J, T_STG

- 55 to + 150

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal

(2)

Revision: 20-Dec-11

Document Number: 89284

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与SMBJ110C-M3/5B相关器件

型号	品牌	获取价格	描述	数据表
SMBJ110CT3	CRYDOM	获取价格	Trans Voltage Suppressor Diode, 600W, 110V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMBJ110CTRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 110V V(RWM), Bidirectional,
SMBJ110C-W	RECTRON	获取价格	Trans Voltage Suppressor Diode, 600W, Bidirectional, 1 Element, Silicon, DO-214AA, PLASTIC
SMBJ110D / CD	SWST	获取价格	瞬态电压抑制管
SMBJ110D-M3/H	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 110V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJ110D-M3/I	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 110V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJ110-E3/52	VISHAY	获取价格	TVS DIODE 110V 196V DO214AA
SMBJ110-E3/5B	VISHAY	获取价格	TVS DIODE 110V 196V DO214AA
SMBJ110E3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 110V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMBJ110E3/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 110V V(RWM), Unidirectional, 1 Element, Silicon, DO-

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