Datasheet > SMBJ10C_17

SMBJ10C_17

更新时间： 2024-02-02 03:52:54

品牌	Logo	应用领域
虹扬 - HY		/
页数	文件大小	规格书
4页	146K
描述
SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS

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SMBJ10C_17 数据手册

SMBJ SERIES

SURFACE MOUNT UNIDIRECTIONAL AND

BIDIRECTIONAL TRANSIENT VOLTAGE

SUPPRESSORS

REVERSE VOLTAGE - 5.0 to 440 Volts

POWER DISSIPATION - 600 Watts

SMB

FEATURES

● Rating to 440V VBR

● For surface mounted applications

.083(2.11)

.075(1.91)

.155(3.94)

.130(3.30)

● Reliable low cost construction utilizing molded plastic

technique

● Plastic material has UL recognition 94V-0

● Typical IR less than 1µA above 10V

.185(4.70)

.160(4.06)

● Fast response time:typically less than 1.0ns for

Uni-direction,less than 5.0ns fo Bi-direction,from 0 Volts

to BV min

.096(2.44)

.084(2.13)

MECHANICAL DATA

● Case : Molded Plastic

● Polarity:by cathode band denotes uni-directional device

none cathode band denotes bi-directional device

● Weight : 0.003 ounces, 0.093 grams

.008(.203)

.002(.051)

.060(1.52)

.030(0.76)

.220(5.59)

.195(4.95)

Dimensions in inches and(millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

VALUE

600

SYMBOL

UNIT

CHARACTERISTICS

Peak Power Dissipation at T_A=25℃by 10×1000μs

P_PPM

waveform (Note1,2)

Peak Forward Surge Current

IFSM

100

8.3ms Single Half Sine-Wave

Super Imposed on Rated Load (JEDEC Method)

5.0

PM(AV)

Steady State Power Dissipation at TL=75℃

Maximum Instantaneous Forward Voltage

at 50A for Unidirectional Devices Only (Note3)

Typical Thermal Resistence Junction to Lead

Typical Thermal Resistence Junction to Ambient

Typical Junction Capacitance (Note4)

3.5/5

RθJL

RθJA

℃/W

100

2000

-55 to + 150

Operating Temperature Range

Storage Temperature Range

℃

TSTG

NOTES:1. Non-repetitive current pulse ,per Fig. 3 and derated above TA=25℃ per Fig. 1.

2. Thermal Resistance junction to Lead.

3.V_F＜3.5V for V_BR≤200V and V_F＜6.5V for V_BR≥201V

4.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.

5.The typical data above is for reference only(典型值仅供参考).

Rev. 8, 16-Mar-2017

12 3 4

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