Datasheet > SMBJ10A-HRA

SMBJ10A-HRA

更新时间： 2024-11-26 22:43:07

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网光电二极管电视
页数	文件大小	规格书
6页	883K
描述
TVS DIODE 10V 17V DO214AA

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

SMBJ10A-HRA 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	SMB, 2 PIN	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.08	其他特性：	EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY, UL RECOGNIZED
最大击穿电压：	12.3 V	最小击穿电压：	11.1 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JEDEC-95代码：	DO-214AA
JESD-30 代码：	R-PDSO-J2	最大非重复峰值反向功率耗散：	600 W
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	最低工作温度：	-65 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性：	UNIDIRECTIONAL
最大功率耗散：	5 W	参考标准：	IEC-61000-4-2, 4-4
最大重复峰值反向电压：	10 V	表面贴装：	YES
技术：	AVALANCHE	端子形式：	J BEND
端子位置：	DUAL	Base Number Matches：	1

SMBJ10A-HRA 数据手册

TVS Diode

Surface Mount – 600W > SMBJ-HRA Series

Pb e3

RoHS

SMBJ-HRA Series

Description

The SMBJ-HRA High Reliability series is designed

speciﬁcally to protect sensitive electronic equipment from

voltage transients induced by lightning and other transient

voltage events.

Uni-directional

Bi-directional

Features

• 600W peak pulse power

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

• Excellent clamping

capability

• Low incremental surge

resistance

• Typical I_Rless than 1µA

above 12V

• V_BR@T_J= V_BR@25°C

x (1+αT x (T_J- 25))

(αT:Temperature

Coefﬁcient, typical value

is 0.1%)

• Glass passivated chip

junction

• High temperature

soldering guaranteed:

260°C/40 seconds at

terminals

• Plastic package is

ﬂammability rated V-0 per

UL 94

• Meet MSL level1, per

J-STD-020, LF maximun

peak of 260°C.

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

• Pb-free E3 means 2nd

level interconnect is Pb-

free and the terminal ﬁnish

material is tin(Sn) (IPC/

JEDEC J-STD-609A.01)

Agency Approvals

Agency

Agency File Number

E230531

• For surface mounted

applications to optimize

board space

Maximum Ratings andThermal Characteristics

(T_A=25^OC unless otherwise noted)

• Low proﬁle package

Parameter

Symbol

Value

Unit

•Typical failure mode is

short from over-speciﬁed

voltage or current

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC 61000-4-2 ESD

Peak Pulse Power Dissipation at

TA=25ºC by 10/1000µs Waveform (Fig.2)(Note

1), (Note 2)

P_PPM

600

Power Dissipation on Inﬁnite Heat Sink at

T_A=50^OC

P_M(AV)

I_FSM

V_F

5.0

100

3.5V

Peak Forward Surge Current, 8.3ms Single Half

Sine Wave (Note 3)

Maximum Instantaneous Forward Voltage at 50A

for Unidirectional Only

15kV(Air), 8kV (Contact)

Operating Junction and StorageTemperature

Range

T_J, T_STG-65 to 150 °C

• ESD protection of data

lines in accordance with

IEC 61000-4-2

• EFT protection of data

lines in accordance with

IEC 61000-4-4

TypicalThermal Resistance Junction to Lead

TypicalThermal Resistance Junction to Ambient

R_ƟJL

R_ƟJA

°C/W

• UL Recognized to ANSI/

UL 497B, “Protectors for

Data Communications and

Fire-Alarm Circuits.”

100

Notes:

1. Non-repetitive current pulse per Fig. 4 and derated above T_A= 25^OC per Fig. 3.

2. Mounted on copper pad area of 0.2x0.2” (5.0 x 5.0mm) to each terminal.

3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional device only, duty

cycle=4 per minute maximum.

• Built-in strain relief

• Fast response time:

typically less than 1.0ps

from 0V to BV min

Functional Diagram

Applications

TVS Components are ideal for the protection of I/O

Interfaces, V_CCbus and other vulnerable circuits used in

Telecom, Computer, Industrial and Consumer

electronic applications.

Bi-directional

Cathode

Anode

Uni-directional

Speciﬁcations are subject to change without notice.

Revised: 04/14/20

12 3 4 5 6

中文翻译

下载PDF

SMBJ10A-HRA 替代型号

型号	品牌	替代类型	描述	数据表
SMBJ10A-HR	LITTELFUSE	类似代替	SMBJ HR系列高可靠性瞬态抑制二极管是经升级筛选的Littelfuse即用型高可靠性瞬
SMBJ10A	LITTELFUSE	功能相似	Silicon Avalanche Diodes - 600W Surface Mount Transient Voltage Suppressors

与SMBJ10A-HRA相关器件

型号	品牌	获取价格	描述	数据表
SMBJ10A-M3/52	VISHAY	获取价格	TVS DIODE 10V 17V DO214AA
SMBJ10A-M3/5B	VISHAY	获取价格	TVS DIODE 10V 17V DO214AA
SMBJ10AQ	DIODES	获取价格	600W SURFACE MOUNT AUTOMOTIVE TRANSIENT VOLTAGE SUPPRESSOR
SMBJ10AQ	MCC	获取价格	Tape :3K/Reel, 48K/Ctn;
SMBJ10AQ	YANGJIE	获取价格	SMB
SMBJ10A-Q1	ANBON	获取价格	SMB
SMBJ10A-T	MCC	获取价格	Trans Voltage Suppressor Diode, 10V V(RWM), Unidirectional,
SMBJ10AT3	CRYDOM	获取价格	Trans Voltage Suppressor Diode, 600W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMBJ10A-T3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 600W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMBJ10ATR	ETC	获取价格	TVS DIODE 10V 17V SMB

与SMBJ10A-HRA相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

45
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

62
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBJ10A-HRA

SMBJ10A-HRA 技术参数

SMBJ10A-HRA 数据手册

SMBJ10A-HRA 替代型号

与SMBJ10A-HRA相关器件

与SMBJ10A-HRA相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBJ10A-HRA

SMBJ10A-HRA 技术参数

SMBJ10A-HRA 数据手册

SMBJ10A-HRA 替代型号

与SMBJ10A-HRA相关器件

与SMBJ10A-HRA相关文章

您还可以找

您在本页遇到什么问题？