是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | R-PDSO-C2 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.10.00.50 |
Factory Lead Time: | 12 weeks | 风险等级: | 2.17 |
Is Samacsys: | N | 其他特性: | EXCELLENT CLAMPING CAPABILITY |
最大击穿电压: | 121 V | 最小击穿电压: | 113 V |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JEDEC-95代码: | DO-214AA |
JESD-30 代码: | R-PDSO-C2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 最大非重复峰值反向功率耗散: | 600 W |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性: | BIDIRECTIONAL | 最大功率耗散: | 1 W |
最大重复峰值反向电压: | 100 V | 表面贴装: | YES |
技术: | AVALANCHE | 端子面层: | Matte Tin (Sn) |
端子形式: | C BEND | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SMBJ100C-E3/52 | VISHAY |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
SMBJ100CE3/TR13 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
SMBJ100CE3TR | MICROSEMI |
获取价格 |
600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC PACKAGE-2 | |
SMBJ100CT3 | LITTELFUSE |
获取价格 |
Trans Voltage Suppressor Diode, 600W, Bidirectional, 1 Element, Silicon, DO-214AA, | |
SMBJ100CT3 | CRYDOM |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
SMBJ100C-T3 | SENSITRON |
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Trans Voltage Suppressor Diode, 600W, 100V V(RWM), Bidirectional, 1 Element, Silicon, DO-2 | |
SMBJ100CTR | MICROSEMI |
获取价格 |
600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC PACKAGE-2 | |
SMBJ100CTRE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 100V V(RWM), Bidirectional, | |
SMBJ100D / CD | SWST |
获取价格 |
瞬态电压抑制管 | |
SMBJ100E3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 600W, 100V V(RWM), Unidirectional, 1 Element, Silicon, DO- |