Datasheet > SMBJ10-M3/5B

SMBJ10-M3/5B

更新时间： 2023-02-26 14:16:28

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	93K
描述
Trans Voltage Suppressor Diode, 600W, 10V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMB, 2 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SMBJ10-M3/5B 数据手册

New Product

SMBJ5.0 thru SMBJ188CA

Vishay General Semiconductor

Surface Mount TRANSZORB Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 600 W peak pulse power capability with a 10/1000 μs

waveform, repetitive rate (duty cycle): 0.01 %

• Excellent clamping capability

DO-214AA (SMB J-Bend)

• Very fast response time

• Low incremental surge resistance

PRIMARY CHARACTERISTICS

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

V_WM

5.0 V to 188 V

P_PPM

600 W

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

_FSM(uni-directional only)

T_Jmax.

100 A

• Halogen-free according to IEC 61249-2-21 definition

150 °C

MECHANICAL DATA

Case: DO-214AA (SMBJ)

Molding compound meets UL 94 V-0 flammability rating

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, and telecommunication.

Base P/N-M3

- halogen-free, RoHS compliant, and

commercial grade

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional use C or CA suffix (e.g. SMBJ10CA).

Electrical characteristics apply in both directions.

M3 suffix meets JESD 201 class 1A whisker test

Polarity: For uni-directional types the band denotes

cathode end, no marking on bi-directional types

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

600

UNIT

(1)(2)

Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)

Peak pulse current with a 10/1000 μs waveform

P_PPM

(1)

I_PPM

See next table

100

(2)

Peak forward surge current 8.3 ms single half sine-wave uni-directional only

Operating junction and storage temperature range

I_FSM

T_J, T_STG

- 55 to + 150

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal

(2)

Document Number: 89284

Revision: 20-Apr-11

For technical questions within your region, please contact one of the following:

DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

中文翻译

下载PDF

与SMBJ10-M3/5B相关器件

型号	品牌	获取价格	描述	数据表
SMBJ10T1	LITTELFUSE	获取价格	Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, DO-214AA
SMBJ10TR	MICROSEMI	获取价格	600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC PACKAGE-2
SMBJ10TRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 10V V(RWM), Unidirectional,
SMBJ11	EIC	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
SMBJ11	MCC	获取价格	Transient Voltage Suppressor 5.0 to 170 Volts 600 Watt
SMBJ11	SSC	获取价格	Transient Voltage Suppressors
SMBJ11	UNIOHM	获取价格	SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
SMBJ11	GOOD-ARK	获取价格	Surface Mount Transient Voltage Suppressors
SMBJ11	DCCOM	获取价格	TECHNICAL SPECIFICATIONS OF SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
SMBJ11	LGE	获取价格	暂无描述

与SMBJ10-M3/5B相关文章

MBRS340T3G手册解读：参数说明、产品特性及应用
2024-06-28

4
PMOS管背靠背连接：串联还是并联？
2024-06-28

4
高压电解电容的分类与选型策略
2024-06-28

5
数码管：基本概念、分类、技术发展及市场趋势
2024-06-27

11

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBJ10-M3/5B

SMBJ10-M3/5B 数据手册

与SMBJ10-M3/5B相关器件

与SMBJ10-M3/5B相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBJ10-M3/5B

SMBJ10-M3/5B 数据手册

与SMBJ10-M3/5B相关器件

与SMBJ10-M3/5B相关文章

您还可以找

您在本页遇到什么问题？