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SMBG70-E3 PDF预览

SMBG70-E3

更新时间： 2024-10-29 13:48:51
品牌 Logo 应用领域
威世 - VISHAY 局域网光电二极管
页数 文件大小 规格书
5页 125K
描述
Trans Voltage Suppressor Diode, 600W, 70V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AA, PLASTIC, SMBG, 2 PIN

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SMBG70-E3 技术参数

是否Rohs认证：符合生命周期：Obsolete
零件包装代码：DO-215AA包装说明：R-PDSO-G2
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.7Is Samacsys：N
其他特性：UL RECOGNIZED最大击穿电压：95.1 V
最小击穿电压：77.8 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-215AAJESD-30 代码：R-PDSO-G2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：600 W元件数量：1
端子数量：2最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性：UNIDIRECTIONAL
认证状态：Not Qualified最大重复峰值反向电压：70 V
表面贴装：YES技术：AVALANCHE
端子面层：MATTE TIN端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
Base Number Matches：1

SMBG70-E3 数据手册

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SMBG5.0 thru 188CA  
Vishay Semiconductors  
formerly General Semiconductor  
Surface Mount TRANSZORB®  
Transient Voltage Suppressors  
Stand-off Voltage 5.0 to 188V  
Peak Pulse Power 600W  
DO-215AA (SMBG)  
Cathode Band  
Mounting Pad Layout  
0.083 (2.10)  
0.077 (1.96)  
0.155 (3.94)  
0.130 (3.30)  
0.165 (4.19)  
0.085 (2.16)  
0.060(1.27)  
Dimensions in inches  
and (millimeters)  
0.180 (4.57)  
0.160 (4.06)  
0.095 (2.41)  
0.075 (1.90)  
0.008 (0.20)  
0.004 (0.10)  
0.016 (0.41)  
0.006 (0.15)  
0.058 (1.47)  
0.038 (0.97)  
SEATING  
PLANE  
0.030 (0.76)  
0.015 (0.38)  
0.020  
(0.51) Max.  
0.255 (6.48)  
0.235 (5.97)  
Features  
Mechanical Data  
• Underwriters Laboratory Recognition under UL standard  
for safety 497B: Isolated Loop Circuit Protection  
Case: JEDEC DO-215AA molded plastic over  
passivated junction  
Terminals: Solder plated, solderable per  
MIL-STD-750, Method 2026  
• Low profile package with built-in strain relief for surface  
mounted applications  
Polarity: For unidirectional types the band denotes the  
cathode, which is positive with respect to the anode  
under normal TVS operation  
Weight: 0.003 oz., 0.093 g  
Flammability: Epoxy is rated UL 94V-0  
• Glass passivated junction  
• Low incremental surge resistance, excellent clamping  
capability  
• 600W peak pulse power capability with a 10/1000µs  
waveform, repetition rate (duty cycle): 0.01%  
Packaging Codes – Options (Antistatic):  
51 – 2K per Bulk box, 20K/carton  
• Very fast response time  
• High temperature soldering guaranteed:  
250°C/10 seconds at terminals  
52 – 750 per 7" plastic Reel (12mm tape), 15K/carton  
5B – 3.2K per 13" plastic Reel (12mm tape), 32K/carton  
Devices for Bidirectional Applications  
For bi-directional devices, use suffix C or CA (e.g. SMBJ10C, SMBJ10CA). Electrical characteristics apply in both directions.  
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
PPPM  
IPPM  
Value  
Minimum 600  
See Table Below  
100  
Unit  
Peak pulse power dissipation with  
W
a 10/1000µs waveform(1)(2) (Fig. 1)  
Peak pulse current with a 10/1000µs waveform(1)  
A
Peak forward surge current 8.3ms single half sine-wave  
uni-directional only(2)  
IFSM  
A
Typical thermal resistance, junction to ambient(4)  
R
100  
20  
°C/W  
°C/W  
°C  
θJA  
Typical thermal resistance, junction to lead  
R
θJL  
Operating junction and storage temperature range  
TJ, TSTG  
–55 to +150  
Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above T = 25°C per Fig. 2  
A
(2) Mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pads to each terminal  
(3) Mounted on minimum recommended pad layout  
Document Number 88456  
24-Jul-03  
www.vishay.com  
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SMBG70-E3/51 VISHAY

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 		Trans Voltage Suppressor Diode, 600W, 70V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMBG70-E3/52 VISHAY

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 		Trans Voltage Suppressor Diode, 70V V(RWM), Unidirectional,
SMBG70E3/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 70V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMBG70E3/TR13 MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 70V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMBG70E3/TR7 MICROSEMI

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 		Trans Voltage Suppressor Diode, 600W, 70V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMBG70E3TR MICROSEMI

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 		600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, ROHS COMPLIANT, PLASTIC PACKAGE-2
SMBG70HE3/52 VISHAY

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 		Trans Voltage Suppressor Diode, 600W, 70V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMBG70-HE3/5B VISHAY

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 		600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, ROHS COMPLIANT, PLASTIC, SMBG, 2 PIN
SMBG70P MCC

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 		DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, SMBG, 2 PIN, Transient Suppress
SMBG70TRE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 70V V(RWM), Unidirectional,

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