Datasheet > SMBG7.0CA-E3/5B

SMBG7.0CA-E3/5B

更新时间： 2024-10-28 22:48:31

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
5页	93K
描述
TVS DIODE 7V 12V DO215AA

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

SMBG7.0CA-E3/5B 数据手册

SMBG5.0A thru SMBG188CA

www.vishay.com

Vishay General Semiconductor

Surface Mount TRANSZORB

Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 600 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate

(duty cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

SMBG (DO-215AA)

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

PRIMARY CHARACTERISTICS

V_WM

5.0 V to 188 V

_BR(uni-directional)

6.4 V to 231 V

600 W

TYPICAL APPLICATIONS

_BR(bi-directional)

P_PPM

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, automotive, and telecommunication.

_FSM(uni-directional only)

100 A

T_Jmax.

150 °C

Polarity

Uni-directional, bi-directional

SMBG (DO-215AA)

MECHANICAL DATA

Case: SMBG (DO-215AA) 

Package

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3

RoHS-compliant, industrial grade

Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional devices use CA suffix (e.g. SMBG10CA).

Electrical characteristics apply in both directions.

meets JESD 201 class 2 whisker test

Polarity: for uni-directional types the band denotes cathode

end, no marking on bi-directional types

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

VALUE

600

UNIT

Peak pulse power dissipation with a 10/1000 μs waveform ⁽¹⁾⁽²⁾(fig. 1)

Peak pulse current with a 10/1000 μs waveform ⁽¹⁾

I_PPM

See next table

100

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Operating junction and storage temperature range

I_FSM

T_J, T_STG

-55 to +150

°C

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal

(2)

Revision: 16-Jan-18

Document Number: 88456

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

SMBG7.0CA-E3/5B 替代型号

型号	品牌	替代类型	描述	数据表
SMBG7.0CA-M3/5B	VISHAY	类似代替	TVS DIODE 7V 12V DO215AA
SMBG7.0CAHE3/52	VISHAY	类似代替	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, ROHS COMPLIANT, PLASTIC, SMBG, 2

与SMBG7.0CA-E3/5B相关器件

型号	品牌	获取价格	描述	数据表
SMBG7.0CAE3/TR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 7V V(RWM), Bidirectional, 1 Element, Silicon, DO-215
SMBG7.0CAHE3/52	VISHAY	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, ROHS COMPLIANT, PLASTIC, SMBG, 2
SMBG7.0CA-HE3/52	VISHAY	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, ROHS COMPLIANT, PLASTIC, SMBG, 2
SMBG7.0CAHE3/5B	VISHAY	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, ROHS COMPLIANT, PLASTIC, SMBG, 2
SMBG7.0CA-HE3/5B	VISHAY	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, ROHS COMPLIANT, PLASTIC, SMBG, 2
SMBG7.0CA-M3/52	VISHAY	获取价格	TVS DIODE 7V 12V DO215AA
SMBG7.0CA-M3/5B	VISHAY	获取价格	TVS DIODE 7V 12V DO215AA
SMBG7.0CATRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 7V V(RWM), Bidirectional,
SMBG7.0CE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 7V V(RWM), Bidirectional, 1 Element, Silicon, DO-215
SMBG7.0CE3/TR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 7V V(RWM), Bidirectional, 1 Element, Silicon, DO-215

与SMBG7.0CA-E3/5B相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

13
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

13
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

40
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

47

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBG7.0CA-E3/5B

SMBG7.0CA-E3/5B 数据手册

SMBG7.0CA-E3/5B 替代型号

与SMBG7.0CA-E3/5B相关器件

与SMBG7.0CA-E3/5B相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBG7.0CA-E3/5B

SMBG7.0CA-E3/5B 数据手册

SMBG7.0CA-E3/5B 替代型号

与SMBG7.0CA-E3/5B相关器件

与SMBG7.0CA-E3/5B相关文章

您还可以找

您在本页遇到什么问题？