Datasheet > SMBG7.0AP

SMBG7.0AP

更新时间： 2024-10-29 10:06:27

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
6页	790K
描述
Trans Voltage Suppressor Diode, 600W, 7V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AA, SMBG, 2 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SMBG7.0AP 数据手册

SMBG5.0(A)

THRU

SMBG170(A)

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

Transient

Voltage Suppressor

5.0 to 170 Volts

600 Watt

l For surface mount applications (flat handing surface for accurate

Placement)

l Available as a unidirectional or bi-directional device

l Fast response time: typical less than 1.0ps from 0 volts to

V_BRminimum

l Suppresses transients up to 600W @1.0ms including ESD per

Human body model test above 16kv (class 3)

l Available on tape and reel

DO-215AA

(SMBG) (Lead Frame)

Mechanical Data

CASE: JEDEC DO-215AA

Cathode Band

Terminals: solderable per MIL-STD-750, Method 2026

Polarity: is indicated by cathode band. Bidirectional devices

Have no polarity band

Maximum soldering temperature: 260^oC for 10 seconds

Maximum Ratings @ 25^oC Unless Otherwise Specified

Peak Pulse Current on

10/1000us waveform

I_PP

See Table 1 Note: 1

Peak Pulse Power

Dissipation

Peak Forward Surge

Current

P_PP

600W

40A

Note: 1,

Note: 3

I_FSM)

P_(AV)

DIMENSIONS

Steady State Power

Dissipation

1.0W

Note: 2,

INCHES

MIN

.075

.077

.004

---

.015

.065

.235

.160

.130

MIN

DIM

MAX

.095

.083

.008

.02

MAX

2.41

2.10

.20

.51

.76

2.13

6.48

4.70

3.94

NOTE

1.91

1.96

.10

---

.38

1.65

5.97

4.06

3.30

Operation And Storage T_J, T_STG-55^oC to

Temperature Range

Thermal Resistance

+150^oC

25^oC/W

.03

.084

.255

.185

.155

NOTES:

SUGGESTED SOLDER

PAD LAYOUT

0.175"

1. Non-repetitive current pulse, per Fig.2 and derated above

T_A=25^oC per Fig.1.

2. Mounted on 4.0mm²copper pads to each terminal.

3. 8.3ms, single half sine wave duty cycle=4 pulses per. Minute

maximum. Peak forward voltage at 40A is 3.5 volts( unipolar

only)

0.095”

4. Lead temperature at 75^oC=T_L

0.070”

5. Peak pulse current waveform is 10/1000us, with maximum duty

Cycle of 0.01%.

www.mccsemi.com

Revision: 3

2003/04/30

12 3 4 5 6

中文翻译

下载PDF

与SMBG7.0AP相关器件

型号	品牌	获取价格	描述	数据表
SMBG7.0C/51-E3	VISHAY	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC, SMBG, 2 PIN, Transient
SMBG7.0C/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 7V V(RWM), Bidirectional, 1 Element, Silicon, DO-215
SMBG7.0C/TR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 7V V(RWM), Bidirectional, 1 Element, Silicon, DO-215
SMBG7.0CA/51-E3	VISHAY	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC, SMBG, 2 PIN, Transient
SMBG7.0CA-51	VISHAY	获取价格	600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC, SMBG, 2 PIN
SMBG7.0CA-E3/52	VISHAY	获取价格	TVS DIODE 7V 12V DO215AA
SMBG7.0CA-E3/5B	VISHAY	获取价格	TVS DIODE 7V 12V DO215AA
SMBG7.0CAE3/TR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 7V V(RWM), Bidirectional, 1 Element, Silicon, DO-215
SMBG7.0CAHE3/52	VISHAY	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, ROHS COMPLIANT, PLASTIC, SMBG, 2
SMBG7.0CA-HE3/52	VISHAY	获取价格	DIODE 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, ROHS COMPLIANT, PLASTIC, SMBG, 2

与SMBG7.0AP相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

13
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

13
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

40
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

47

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBG7.0AP

SMBG7.0AP 数据手册

与SMBG7.0AP相关器件

与SMBG7.0AP相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBG7.0AP

SMBG7.0AP 数据手册

与SMBG7.0AP相关器件

与SMBG7.0AP相关文章

您还可以找

您在本页遇到什么问题？