Datasheet > SMBG60C-E3/52

SMBG60C-E3/52

更新时间： 2024-10-28 14:38:35

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
6页	103K
描述
Trans Voltage Suppressor Diode, 60V V(RWM), Bidirectional,

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SMBG60C-E3/52 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.83
击穿电压标称值：	74.1 V	最大钳位电压：	107 V
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	极性：	BIDIRECTIONAL
最大重复峰值反向电压：	60 V	子类别：	Transient Suppressors
表面贴装：	YES	Base Number Matches：	1

SMBG60C-E3/52 数据手册

SMBG5.0 thru SMBG188CA

Vishay General Semiconductor

Surface Mount TRANSZORB^®Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available inuni-directional and bi-directional

• 600 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty

cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

DO-215AA (SMBG)

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

PRIMARY CHARACTERISTICS

TYPICAL APPLICATIONS

V_WM

P_PPM

5.0 V to 188 V

600 W

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor units

for consumer, computer, industrial, automotive and

telecommunication.

I_FSM(uni-directional only)

T_Jmax.

100 A

150 °C

MECHANICAL DATA

Case: DO-215AA (SMBG)

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, high reliability/

automotive grade (AEC Q101 qualified)

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional devices use C or CA suffix

(e.g. SMBG10CA).

Electrical characteristics apply in both directions.

E3 suffix meets JESD 201 class 1A whisker test, HE3

suffix meets JESD 201 class 2 whisker test

Polarity: For uni-directional types the band denotes

cathode end, no marking on bi-directional types

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

VALUE

600

UNIT

Peak pulse power dissipation with a 10/1000 µs waveform ⁽¹⁾⁽²⁾(Fig. 1)

Peak pulse current with a 10/1000 µs waveform ⁽¹⁾

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Operating junction and storage temperature range

I_PPM

See next table

100

I_FSM

T_J, T_STG

- 55 to + 150

°C

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2

(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal

Document Number: 88456

Revision: 22-Oct-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5 6

中文翻译

下载PDF

与SMBG60C-E3/52相关器件

型号	品牌	获取价格	描述	数据表
SMBG60C-E3/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 60V V(RWM), Bidirectional,
SMBG60CE3/TR13	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 60V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMBG60CE3/TR7	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 60V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMBG60CE3TR	MICROSEMI	获取价格	600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, ROHS COMPLIANT, PLASTIC PACKAGE-2
SMBG60CHE3/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 600W, 60V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMBG60C-TP	MCC	获取价格	Trans Voltage Suppressor Diode, Unidirectional, 1 Element, Silicon, DO-215AA, SMBG, 2 PIN
SMBG60CTR	MICROSEMI	获取价格	600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC PACKAGE-2
SMBG60CTRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 60V V(RWM), Bidirectional,
SMBG60-E3/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 60V V(RWM), Unidirectional,
SMBG60E3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 60V V(RWM), Unidirectional, 1 Element, Silicon, DO-2

与SMBG60C-E3/52相关文章

三星深化印度制造布局，供应链本地化进程加速
2024-10-29

13
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

13
纳微科技震撼发布GaNSlim革新氮化镓功率芯片
2024-10-18

39
意法半导体发布第四代SiC技术，助力电动汽车电驱
2024-10-15

46

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBG60C-E3/52

SMBG60C-E3/52 技术参数

SMBG60C-E3/52 数据手册

与SMBG60C-E3/52相关器件

与SMBG60C-E3/52相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMBG60C-E3/52

SMBG60C-E3/52 技术参数

SMBG60C-E3/52 数据手册

与SMBG60C-E3/52相关器件

与SMBG60C-E3/52相关文章

您还可以找

您在本页遇到什么问题？