Datasheet > SMBD7000 / MMBD7000

SMBD7000 / MMBD7000

更新时间： 2024-11-21 14:56:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
6页	70K
描述
High Speed Switching Diode.

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数据手册

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SMBD7000 / MMBD7000 数据手册

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SMBD7000/MMBD7000...

Silicon Switching Diode Array

• For high-speed switching applications

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

SMBD7000/MMBD7000

Type

SMBD7000/MMBD7000

Package

Configuration

series

Marking

SOT23

s5C

Maximum Ratings at T = 25°C, unless otherwise specified

Parameter

Symbol

Value

100

Unit

Diode reverse voltage

Peak reverse voltage

Forward current

100

200

Non-repetitive peak surge forward current

t = 1 µs

FSM

4.5

0.5

330

t = 1 s

°C

Total power dissipation

tot

T ≤ 28°C

150

Junction temperature

Storage temperature

-65 ... 150

stg

Thermal Resistance

Parameter

Symbol

Value

Unit

K/W

Junction - soldering point

≤ 360

thJS

SMBD7000/MMBD7000

Pb-containing package may be available upon special request

For calculation of R

thJA

please refer to Application Note Thermal Resistance

2007-03-28

12 3 4 5 6

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SMBD914E6327HTSA1	INFINEON	获取价格	Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3
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