Datasheet > SMB8J10CA-HE3/52

SMB8J10CA-HE3/52

更新时间： 2024-09-26 13:42:55

品牌	Logo	应用领域
威世 - VISHAY		电视
页数	文件大小	规格书
6页	97K
描述
DIODE 800 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Transient Suppressor

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SMB8J10CA-HE3/52 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AA
包装说明：	ROHS COMPLIANT, PLASTIC, SMB, 2 PIN	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.76
Is Samacsys：	N	Base Number Matches：	1

SMB8J10CA-HE3/52 数据手册

SMB10(8)J5.0(C)A thru SMB10(8)J40(C)A

www.vishay.com

Vishay General Semiconductor

High Power Density Surface Mount TRANSZORB

Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• AEC-Q101 qualified

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

DO-214AA (SMB)

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, automotive, and telecommunication.

PRIMARY CHARACTERISTICS

V_WM

5.0 V to 40 V

1000 W

800 W

MECHANICAL DATA

_PPM(uni-directional)

_PPM(bi-directional)

Case: DO-214AA (SMBJ)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3

- RoHS compliant, commercial grade

I_FSM(uni-directional only)

100 A

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

T_Jmax.

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: For uni-directional types the color band denotes

cathode end, no marking on bi-directional types

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

1000

UNIT

uni-directional

Peak pulse power dissipation

P_PPM

with a 10/1000 μs waveform ⁽¹⁾⁽²⁾(fig. 1)

bi-directional

800

Peak pulse current with a 10/1000 μs waveform ⁽¹⁾

I_PPM

P_D

See next table

100

°C

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

Operating junction and storage temperature range

T_J, T_STG

- 55 to 150

Notes

(1)

Non-repetitive current pulse, per fig. 3 and derated above T_A= 25 °C per fig. 2

Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal

(2)

Revision: 13-Mar-12

Document Number: 88422

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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与SMB8J10CA-HE3/52相关器件

型号	品牌	获取价格	描述	数据表
SMB8J10CAHE3/5B	VISHAY	获取价格	TVS DIODE 10V 17V DO214AA
SMB8J10CA-HE3/5B	VISHAY	获取价格	DIODE 800 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2
SMB8J10CAHE3_A/H	VISHAY	获取价格	Trans Voltage Suppressor Diode,
SMB8J10CAHE3_A/I	VISHAY	获取价格	Trans Voltage Suppressor Diode,
SMB8J10CAHM3_A/H	VISHAY	获取价格	Trans Voltage Suppressor Diode,
SMB8J10CAHM3_A/I	VISHAY	获取价格	Trans Voltage Suppressor Diode,
SMB8J10C-E3/2C	VISHAY	获取价格	Trans Voltage Suppressor Diode, 800W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMB8J10C-E3/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 800W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMB8J10C-E3/55	VISHAY	获取价格	Trans Voltage Suppressor Diode, 800W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
SMB8J10C-E3/5B	VISHAY	获取价格	Trans Voltage Suppressor Diode, 800W, 10V V(RWM), Bidirectional, 1 Element, Silicon, DO-21

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