Datasheet > SMB3EZ17

SMB3EZ17

更新时间： 2024-11-09 11:58:55

品牌	Logo	应用领域
台芯 - TAYCHIPST		稳压二极管
页数	文件大小	规格书
4页	13121K
描述
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES

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中文翻译

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数据手册

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SMB3EZ17 数据手册

SMB3EZ6.8 THRU SMB3EZ100

6.8V-100V

7.5mA-110mA

GLASS PASSIVATED JUNCTION SILICON ZENER DIODES

FEATURES

• Low profile package

• Built-in strain relief

• Low inductance

• Typical I_Dless than 1.0µA above 11V

• Plastic package has Underwriters Laboratory Flammability

Classification 94V-O

• High temperature soldering : 260°C /10 seconds at terminals

• Pb free product are available : 99% Sn can meet RoHS environment

substance directive request

Mechanical Data

Case: JEDEC DO-214AA, Molded plastic over passivated junction

Terminals: Solder plated, solderable per MIL-STD-750, Method 2026

Polarity: Indicated by cathode band

Standard packing: 12mm tape (E1A-481)

Weight: 0.003 ounce, 0.093 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

Value

Units

Peak Pulse Power Dissipation on TA=50^OC (Notes A)

Derate above 70^OC

3.0

24.0

W atts

mW/ ^O

Peak Forward Surge Current 8.3ms single half sine-wave

superimposed on rated load (JEDEC method)

Amps

^OC

FSM

Operating Junction and Storage Temperature Range

-55 to + 150

TJ,TSTG

NOTES:

A.Mounted on 5.0mm²(.013mm thick) land areas.

B.Measured on 8.3ms, and single half sine-wave or equivalent square wave ,duty cycle=4 pulses per minute maximum

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E-mail: sales@taychipst.com

Web Site: www.taychipst.com

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