5秒后页面跳转
SMAJP4KE12 PDF预览

SMAJP4KE12

更新时间: 2024-02-12 11:36:52
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
4页 331K
描述
Transient Voltage Suppressor

SMAJP4KE12 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.7二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
湿度敏感等级:1峰值回流温度(摄氏度):260
处于峰值回流温度下的最长时间:10

SMAJP4KE12 数据手册

 浏览型号SMAJP4KE12的Datasheet PDF文件第2页浏览型号SMAJP4KE12的Datasheet PDF文件第3页浏览型号SMAJP4KE12的Datasheet PDF文件第4页 
SMAJP4KE6.8 thru SMAJP4KE400CA  
Transient Voltage Suppressor  
Breakdown Voltage 6.8 to 400 Volts  
Peak Pulse Power  
400 Watts  
Features  
Breakdown Voltages (VBR)from 6.8 to 400V  
CASE: SMA (DO214AC)  
400W peak pulse power capability with a 10/1000μs  
waveform, repetitive rate (duty cycle):0.01%  
Fast Response Time  
Low incremental surge resistance  
Excellent clamping capability  
Available in uni-directional and bi-direcona
High temperature soldering guaranteed10  
seconds, 0.375” (9.5mm) lead length5ls. g)  
tension  
Application  
Use isensitive electronics protectioagainst vltage  
transies induced by inductive load witchng and  
lighting oICS, MOSFE, signal lines of sensor units for  
consumercoputer, industrial, automotive and  
telecommuicaton  
MechanicaDaa  
Case: Voi-free transfer molded thermosetting epoxy  
body meeting UL94V-O  
Terminals: Tin-Lead or ROHS Compliant annealed  
matte-Tin plating readily solderable per MIL-STD-750,  
Method 2026  
Marking: Body marked with part number  
Polarity: Cathode indicated by band. No marking on bi-  
directional devices  
Dimenons in inches nd (millimeters)  
Weight: 0.053gApproximately)  
Maximum Ratings ad Electrical Characteristics @ 25OC unless otherwise specified  
Conditions  
Symbol  
Value  
400  
Unit  
W
PPPM  
eak pulse power capability with a 10/1000μs  
Peak pulse current with a 10/1000μs  
IPPM  
SEE TABLE1  
5.0  
A
Steady state power dissipation at TL=65,Lead lengths 0.375”(10mm)  
W
PM(AV)  
Steady state power dissipation at TA=25when mounted on FR4 PC  
described for thermal resistance  
1.52  
W
IFSM  
VF  
Peak forward surge current,8.3ms single half sine-wave unidirectional only⑴  
Maximum instantaneous forward voltage at 30A for unidirectional only⑵  
Thermal resistance junction to lead  
40  
3.5/5.0  
17  
A
V
RθJL  
/W  
/W  
RθJA  
Thermal resistance junction to ambient  
82  
TJ, TSTG  
Operating and Storage Temperature  
-65 to +150  
Notes:  
Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum  
VF=3.5V for SMAJP4KE220(A) and below; VF=5.0V for SMAJP4KE250(A) and above  
Document Number: SMAJP4KE6.8 thru SMAJP4KE400CA  
Feb.29, 2012  
www.smsemi.com  
1

与SMAJP4KE12相关器件

型号 品牌 获取价格 描述 数据表
SMAJP4KE120 ETC

获取价格

Transient Voltage Suppressor
SMAJP4KE120A MCC

获取价格

Transient Voltage Suppressor 6.8 to 550 Volts 400 Watt
SMAJP4KE120AE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 102V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMAJP4KE120AE3TR MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 102V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SMAJP4KE120AHE3 MCC

获取价格

Tape: 5K/Reel, 80K/Ctn;
SMAJP4KE120AQ MCC

获取价格

Tape: 5K/Reel, 80K/Ctn;
SMAJP4KE120A-TP MCC

获取价格

暂无描述
SMAJP4KE120ATRE3 MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 102V V(RWM), Unidirectional,
SMAJP4KE120CA MICROSEMI

获取价格

Trans Voltage Suppressor Diode, 400W, 102V V(RWM), Bidirectional, 1 Element, Silicon, DO-2
SMAJP4KE120CA MCC

获取价格

Trans Voltage Suppressor Diode, 400W, 102V V(RWM), Bidirectional, 1 Element, Silicon, DO-2