Datasheet > SMAJ8.0C-E3/61

SMAJ8.0C-E3/61

更新时间： 2024-11-27 03:10:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	94K
描述
Trans Voltage Suppressor Diode, 300W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

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替代型号

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SMAJ8.0C-E3/61 数据手册

SMAJ5.0 thru SMAJ188CA

Vishay General Semiconductor

Surface Mount TRANSZORB^®Transient Voltage Suppressors

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available inuni-directional and bi-directional

• 400 W peak pulse power capability with a

10/1000 µs waveform, repetitive rate (duty

cycle): 0.01 % (300 W above 78 V)

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

DO-214AC (SMA)

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

PRIMARY CHARACTERISTICS

TYPICAL APPLICATIONS

V_WM

5.0 V to 188 V

400 W, 300 W

40 A

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and

lighting on ICs, MOSFET, signal lines of sensor units

for consumer, computer, industrial, automotive and

telecommunication.

P_PPM

I_FSM

T_Jmax.

150 °C

MECHANICAL DATA

Case: DO-214AC (SMA)

Molding compound meets UL 94 V-0 flammability

rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, high reliability/

automotive grade (AEC Q101 qualified)

DEVICES FOR BI-DIRECTION APPLICATIONS

For bi-directional use C or CA suffix (e.g. SMAJ10C,

SMAJ10CA).

Electrical characteristics apply in both directions.

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3

suffix meets JESD 201 class 2 whisker test

Polarity: For uni-directional types the band denotes

cathode end, no marking on bi-directional types

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

P_PPM

VALUE

400

UNIT

Peak pulse power dissipation with a 10/1000 µs waveform ⁽¹⁾⁽²⁾(Fig. 1)

Peak pulse current with a waveform ⁽¹⁾

Peak forward surge current 8.3 ms single half sine-wave uni-directional only ⁽²⁾

I_PPM

See next table

I_FSM

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

°C

Notes:

(1) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25 °C per Fig. 2. Rating is 300 W above 78 V

(2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal

Document Number: 88390

Revision: 29-Oct-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4 5 6

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SMAJ8.0C-E3/61 替代型号

型号	品牌	替代类型	描述	数据表
SMAJ8.0CA-E3/61	VISHAY	类似代替	TVS DIODE 8V 13.6V DO214AC

与SMAJ8.0C-E3/61相关器件

型号	品牌	获取价格	描述	数据表
SMAJ8.0C-G	WEITRON	获取价格	Transient Suppressor,
SMAJ8.0C-M3/61	VISHAY	获取价格	Trans Voltage Suppressor Diode, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC, HA
SMAJ8.0CP	MCC	获取价格	DIODE 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC, PLASTIC, SMA, 2 PIN, Transient S
SMAJ8.0C-T3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 400W, 8V V(RWM), Bidirectional, 1 Element, Silicon, DO-214
SMAJ8.0CTRE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 8V V(RWM), Bidirectional,
SMAJ8.0D / CD	SWST	获取价格	瞬态电压抑制管
SMAJ8.0E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMAJ8.0-E3/51	VISHAY	获取价格	Trans Voltage Suppressor Diode, 400W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-21
SMAJ8.0-G	WEITRON	获取价格	Transient Suppressor,
SMAJ8.0-GT3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 400W, 8V V(RWM), Unidirectional, 1 Element, Silicon, DO-21

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