Datasheet > SMAJ75AE3/TR13

SMAJ75AE3/TR13

更新时间： 2024-11-20 06:17:03

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
6页	484K
描述
Trans Voltage Suppressor Diode, 400W, 75V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SMAJ75AE3/TR13 数据手册

SMAJ5.0e3 to SMAJ440CAe3

400W Transient Voltage Suppressor (TVS) protection device

Main product characteristics

V_WM

V_BR(min)- V_BR(max)

I_PP

5.0V – 440V

6.40V – 543V

41.7A – 0.6A

9.6V – 713V

400W

RoHS

COMPLIANT

V_CL(MAX)

P_PP

DO-214AC (SMA)

Description and applications

This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or

radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response

time of clamping action is virtually instantaneous. As a result, they may also be used effectively for protection from

ESD or EFT per IEC61000-4-2 and IEC61000-4-4 or for inductive switching environments and induced RF. They can

also be used for protecting other sensitive components from secondary lightning effects per IEC61000-4-5 and class

levels defined herein. Microsemi also offers numerous other TVS products to meet higher and lower power demands

and special applications.

•

RoHS compliant (2002/95/EC), MSL level 1 (J-STD-020)

Qualified to automotive grade – AEC Q101

Bi-directional devices are denoted by the suffixes C or CA, electrical characteristics apply in both directions.

Maximum ratings and characteristics⁽¹⁾

Symbol

P_PPM

Parameter

Value

400

Unit

Peak power dissipation with a 10/1000µs waveform ⁽²⁾⁽³⁾(fig.1)

Peak pulse current with a 10/1000µs waveform ⁽²⁾(fig. 3)

I_PPM

See next table

Steady state power dissipation at T_L= 75ºC, lead lengths 0.375”

P_M(AV)

I_FSM

V_F

1.0

(9.5mm) ⁽³⁾

Non repetitive peak forward surge current

(8.3ms single half sine wave) unidirectional only ⁽⁴⁾

Maximum instantaneous forward voltage at 25A for unidirectional

only ⁽⁵⁾

3.5 / 5.0

R_ΘJL

R_ΘJA

T_STG

T_J

Typical thermal resistance junction to lead

Typical thermal resistance junction to ambient

Storage temperature

ºC/W

ºC

120

-55 to +150

Junction temperature

ºC

(1) All ratings at 25ºC unless specified otherwise

(2) Non-repetitive current pulse, per Fig. 3 and derated above T_A= 25ºC per Fig. 2. rating is 300W above 78V.

(3) Mounted on copper pad area of 0.2” x 0.2” (5.0mm x 5.0mm)

(4) Mounted on minimum recommended pad layout

(5) V_F=3.5V for devices of V_BR< 220V and V_F=5.0V maximum for devices of V_BR> 220V

Mar Rev C

1/6

www.Microsemi.com

12 3 4 5 6

中文翻译

下载PDF

与SMAJ75AE3/TR13相关器件

型号	品牌	获取价格	描述	数据表
SMAJ75AE3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 500W, 75V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMAJ75A-G	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 400W, 75V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMAJ75A-GT3	SENSITRON	获取价格	Trans Voltage Suppressor Diode, 400W, 75V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
SMAJ75AHE3	MCC	获取价格	Tape: 5K/Reel, 80K/Ctn;
SMAJ75AHE3/5A	VISHAY	获取价格	TVS DIODE 75V 121V DO214AC
SMAJ75AHE3/61	VISHAY	获取价格	TVS DIODE 75V 121V DO214AC
SMAJ75A-HP6AT	YAGEO	获取价格	瞬态抑制二极管 (车用)
SMAJ75A-M3/5A	VISHAY	获取价格	TVS DIODE 75V 121V DO214AC
SMAJ75A-M3/61	VISHAY	获取价格	TVS DIODE 75V 121V DO214AC
SMAJ75AQ	DIODES	获取价格	400W Surface-Mount Automotive Transient Voltage Suppressor

与SMAJ75AE3/TR13相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

23
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

15
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

45
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

45

产品中心

服务支持

精选活动

关于我们

帮助中心

SMAJ75AE3/TR13

SMAJ75AE3/TR13 数据手册

与SMAJ75AE3/TR13相关器件

与SMAJ75AE3/TR13相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SMAJ75AE3/TR13

SMAJ75AE3/TR13 数据手册

与SMAJ75AE3/TR13相关器件

与SMAJ75AE3/TR13相关文章

您还可以找

您在本页遇到什么问题？