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SMA428A PDF预览

SMA428A

更新时间: 2024-11-18 22:43:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 射频和微波射频放大器微波放大器
页数 文件大小 规格书
8页 106K
描述
High Gain, Low Noise Amplifier

SMA428A 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.72Is Samacsys:N
特性阻抗:50 Ω构造:COMPONENT
增益:18 dB最大输入功率 (CW):8 dBm
最高工作温度:85 °C最低工作温度:-40 °C
射频/微波设备类型:NARROW BAND LOW POWERBase Number Matches:1

SMA428A 数据手册

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SMA428A  
High Gain, Low Noise Amplifier  
PRELIMINARY DATA  
HIGH GAIN Gp = 21 dB at 1.85 GHz  
LOW NOISE FIGURE NF = 1.3 dB at 1.85 GHz  
LOW CURRENT CONSUMPTION 5.9 mA  
OPEN COLLECTOR OUTPUT  
TYPICAL SUPPLY VOLTAGE: 2.4-3 V  
GAIN-STEP-MODE (36dB)  
SOT323-6L (SC70)  
ULTRA MINIATURE SOT323-6L PACKAGE (LEAD  
FREE)  
ORDER CODE  
BRANDING  
SMA428ATR  
TBD  
APPLICATIONS  
LNA FOR CELLULAR MARKET (ideal for GSM900,  
DCS1800 and PCS1900).  
BLOCK DIAGRAM  
Vcc, 1  
LNA FOR GPS APPLICATIONS  
DESCRIPTION  
GS, 4  
In, 6  
High gain and low noise figures make the SMA428A an  
ideal solution for Low Noise Amplifiers and receiver  
front end stages up to 2.5 GHz. SMA428A’s typical  
supply voltage range is 2.4 to 3.3 volts. It shows  
excellent performances in terms of NF, Gain and  
current consumption, using just 3 external matching  
components. Applying supply voltage to the GS pin and  
grounding Vcc pin, it provides a reduced gain step of 35  
dB. SMA428A is housed in ultra miniature SOT323-6L  
package(LEAD FREE), the relative dimensions are  
1.15mmx1.8mm with 0.8mm thickness.  
Out, 3  
GND, 2;5  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
Device voltage  
4
V
V
cc  
V
out  
Voltage at pin Out  
Voltage at pin GS  
Total Device Current  
Current into pin In  
4
V
GS  
3.5  
V
I
tot  
12  
mA  
mA  
mW  
dBm  
I
0.5  
in  
o
P
60  
8
Total dissipation, T < 125 C  
tot  
s
P
Input Power  
IN  
o
T
Operating temperature  
Storage temperature  
-40 to +85  
op  
C
o
T
stg  
-65 to +150  
150  
C
o
T
Max. operating junction temperature  
j
C
THERMAL RESISTANCE  
o
R
Thermal Resistance Junction soldering point  
200  
thjs  
C/W  
1/8  
March, 10 2003  

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