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SMA4030 PDF预览

SMA4030

更新时间: 2024-11-18 22:43:03
品牌 Logo 应用领域
三垦 - SANKEN /
页数 文件大小 规格书
1页 25K
描述
PNP Darlington General purpose

SMA4030 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMA, SIP-12
针数:12Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:1.27其他特性:BUILT IN BIAS RESISTANCE RATIO IS 0.067
最大集电极电流 (IC):3 A集电极-发射极最大电压:100 V
配置:4 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR最小直流电流增益 (hFE):2000
JESD-30 代码:R-PSIP-T12元件数量:4
端子数量:12封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified子类别:BIP General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):40 MHz
Base Number Matches:1

SMA4030 数据手册

  
PNP Darlington  
General purpose  
• • •  
SMA4030  
External dimensions  
SMA  
B
Absolute maximum ratings  
Electrical characteristics  
(Ta=25°C)  
(Ta=25°C)  
Specification  
typ  
Symbol  
Ratings  
Unit  
Symbol  
Unit  
Conditions  
min  
max  
10  
VCBO  
VCEO  
VEBO  
IC  
120  
V
V
V
A
A
A
ICBO  
IEBO  
VCEO  
hFE  
µA  
mA  
V
VCB=120V  
VEB=6V  
100  
10  
6
3
100  
IC=25mA  
2000  
6000  
1.1  
1.7  
0.5  
2.2  
0.9  
40  
15000  
1.5  
VCE=4V, IC=1.5A  
ICP  
5 (PW1ms, Du50%)  
0.2  
VCE(sat)  
VBE(sat)  
ton  
V
V
IC=1.5A, IB=3mA  
IB  
2.0  
4 (Ta=25°C)  
20 (Tc=25°C)  
150  
µs  
VCC 30V  
IC=1.5A  
PT  
W
tstg  
µs  
Tj  
°C  
°C  
tf  
µs  
IB1=–IB2=3mA  
VCE=12V, IE=–0.5A  
VCB=10V, f=1MHz  
Tstg  
–40 to +150  
fT  
MHz  
pF  
Cob  
30  
Equivalent circuit diagram  
2
4
6
9
7
11  
10  
5
8
12  
1
R1  
R2  
3
R1: 3ktyp R2: 200typ  
Characteristic curves  
IC-VCE Characteristics (Typical)  
hFE-IC Characteristics (Typical)  
hFE-IC Temperature Characteristics (Typical)  
(VCE=4V)  
(VCE=4V)  
5
20000  
10000  
5000  
20000  
75°C  
typ  
10000  
25°C  
4
3
5000  
1000  
500  
1000  
500  
2
1
0
100  
50  
100  
50  
0.03 0.05 0.1  
0.5  
1
5
0.03  
0.05 0.1  
0.5  
1
5
0
1
2
3
4
5
6
IC (A)  
I
C
(A)  
V
CE (V)  
VCE(sat)-IC Temperature Characteristics (Typical)  
VCE(sat)-IB Characteristics (Typical)  
IC-VBE Temperature Characteristics (Typical)  
(I  
C
/ I  
B=1000)  
(VCE=4V)  
3
5
3
4
75°C  
2
2
25°C  
25°C  
75°C  
3
IC=3A  
IC=1.5A  
2
1
1
C
IC  
=1A  
°
=125  
a
C
1
0
°
T
–30  
0
0.1  
0
0.5  
0.5  
1
5
10  
50  
0
1
2
3
1
5
I
C
(A)  
I
B
(mA)  
V
BE (V)  
θ j-a-PW Characteristics  
PT-Ta Characteristics  
Safe Operating Area (SOA)  
20  
20  
10  
5
10  
5
15  
10  
1
0.5  
5
0
Without Heatsink  
1
0.1  
Single Pulse  
Without Heatsink  
0.05  
0.03  
T
a=25°C  
0.5  
0
5
10  
50 100  
500 1000  
–40  
0
50  
a
100  
150  
3
5
10  
50  
100  
PW (mS)  
T
(°C)  
V
CE (V)  
94  

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