Datasheet > SM8S24AHE3

SM8S24AHE3

更新时间： 2024-11-12 12:01:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	98K
描述
Surface Mount PAR Transient Voltage Suppressors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SM8S24AHE3 数据手册

New Product

SM8S10 thru SM8S43A

Vishay General Semiconductor

www.vishay.com

Surface Mount PAR^®Transient Voltage Suppressors

High Temperature Stability and High Reliability Conditions

FEATURES

• Junction passivation optimized design passivated

anisotropic rectifier technology

• T_J= 175 °C capability suitable for high reliability

and automotive requirement

• Available in uni-directional polarity only

• Low leakage current

• Low forward voltage drop

DO-218AB

• High surge capability

• Meets ISO7637-2 surge specification (varied by test

condition)

• Meets MSL level 1, per J-STD-020, LF maximum peak of

245 °C

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

PRIMARY CHARACTERISTICS

V_WM

10 V to 43 V

6600 W

5200 W

8 W

TYPICAL APPLICATIONS

_PPM(10 x 1000 μs)

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting,

especially for automotive load dump protection application.

_PPM(10 x 10 000 μs)

P_D

I_FSM

700 A

T_Jmax.

175 °C

MECHANICAL DATA

Case: DO-218AB

Molding compound meets UL 94 V-0 flammability rating

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

HE3 suffix meets JESD 201 class 2 whisker test

Polarity: Heatsink is anode

MAXIMUM RATINGS (T_C= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VALUE

UNIT

with 10/1000 μs waveform

Peak pulse power dissipation

6600

P_PPM

P_D

with 10/10 000 μs waveform

5200

8.0

Power dissipation on infinite heatsink at T_C= 25 °C (fig. 1)

Peak pulse current with 10/1000 μs waveform

(1)

I_PPM

See next table

Peak forward surge current 8.3 ms single half sine-wave

Operating junction and storage temperature range

I_FSM

700

T_J, T_STG

- 55 to + 175

°C

Note

(1)

Non-repetitive current pulse derated above T_A= 25 °C

Revision: 14-Sep-11

Document Number: 88387

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5

中文翻译

下载PDF

与SM8S24AHE3相关器件

型号	品牌	获取价格	描述	数据表
SM8S24AHE3/2D	VISHAY	获取价格	DIODE 6600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB, ROHS COMPLIANT, PLASTIC PACKAG
SM8S24AHE3_A/I	VISHAY	获取价格	Trans Voltage Suppressor Diode, 5200W, 24V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SM8S24A-LF-T13	PROTEC	获取价格	Trans Voltage Suppressor Diode, 6600W, 24V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SM8S24AQ	YANGJIE	获取价格	DO-218AB
SM8S24A-Q	BOURNS	获取价格	Trans Voltage Suppressor Diode,
SM8S24A-Q1	ANBON	获取价格	DO-218AB
SM8S24A-T13	PROTEC	获取价格	Trans Voltage Suppressor Diode
SM8S24A-TP-HF	MCC	获取价格	Trans Voltage Suppressor Diode,
SM8S24CA	YINT	获取价格	Automotive and High Reliability TVS Diodes
SM8S24CA	SUNMATE	获取价格	Protection Devices TVS transient suppression diode

与SM8S24AHE3相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

8
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

9
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

SM8S24AHE3

SM8S24AHE3 数据手册

与SM8S24AHE3相关器件

与SM8S24AHE3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SM8S24AHE3

SM8S24AHE3 数据手册

与SM8S24AHE3相关器件

与SM8S24AHE3相关文章

您还可以找

您在本页遇到什么问题？