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SM724

更新时间： 2024-11-18 22:21:43
品牌 Logo 应用领域
POLYFET 晶体晶体管栅
页数 文件大小 规格书
2页 38K
描述
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

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SM724 数据手册

 浏览型号SM724的Datasheet PDF文件第2页 
polyfet rf devices  
SM724  
General Description  
Silicon VDMOS and LDMOS  
transistors designed specifically  
for broadband RF applications.  
Suitable for Militry Radios,  
SILICON GATE ENHANCEMENT MODE  
RF POWER VDMOS TRANSISTOR  
Cellular and Paging Amplifier Base  
Stations, Broadcast FM/AM, MRI,  
Laser Driver and others.  
60.0 Watts Single Ended  
Package Style AM  
TM  
"Polyfet" process features  
low feedback and output capacitances  
HIGH EFFICIENCY, LINEAR  
HIGH GAIN, LOW NOISE  
resulting in high F transistors with high  
t
input impedance and high efficiency.  
o
25 C )  
ABSOLUTE MAXIMUM RATINGS ( T =  
Total  
Device  
Dissipation  
Junction to  
Case Thermal  
Resistance  
Maximum  
Junction  
Temperature  
DC Drain  
Current  
Drain to  
Gate  
Voltage  
Drain to  
Source  
Voltage  
Gate to  
Source  
Voltage  
Storage  
Temperature  
o
C/W  
o
o
o
19.0  
190 Watts  
200 C  
-65 C to 150 C  
A
50V  
50V  
20 V  
0.85  
RF CHARACTERISTICS (  
60.0 WATTS OUTPUT )  
SYMBOL PARAMETER  
MIN  
10  
TYP  
MAX  
UNITS  
TEST CONDITIONS  
Idq = 0.80 A, Vds = 12.5 V, F = 175  
Gps  
Common Source Power Gain  
Drain Efficiency  
MHz  
dB  
%
h
Idq =  
0.80  
75  
A, Vds = 12.5 V, F = 175 MHz  
Idq = 0.80  
A, Vds = 12.5 V, F = 175  
MHz  
VSWR  
Load Mismatch Tolerance  
20:1  
Relative  
ELECTRICAL CHARACTERISTICS ( EACH SIDE )  
SYMBOL PARAMETER  
MIN  
40  
TYP  
MAX  
UNITS  
V
TEST CONDITIONS  
Drain Breakdown Voltage  
Ids = 80.00 mA, Vgs = 0V  
Vds =  
Bvdss  
Idss  
4.0  
Zero Bias Drain Current  
Gate Leakage Current  
mA  
12.5 V, Vgs = 0V  
Igss  
Vgs  
1
7
uA  
V
Vds = 0V Vgs = 30V  
Gate Bias for Drain Current  
1
Ids = 0.40 A, Vgs = Vds  
5.2  
gM  
Forward Transconductance  
Saturation Resistance  
Mho  
Vds = 10V, Vgs = 5V  
Rdson  
Ohm  
Vgs = 20V, Ids =10.00 A  
0.20  
38.00  
180.0  
14.0  
Idsat  
Ciss  
Crss  
Coss  
Saturation Current  
Amp  
pF  
Vgs = 20V, Vds = 10V  
12.5 Vgs = 0V, F = 1 MHz  
Common Source Input Capacitance  
Common Source Feedback Capacitance  
Common Source Output Capacitance  
Vds =  
Vds =  
Vds =  
12.5 Vgs = 0V, F = 1 MHz  
12.5 Vgs = 0V, F = 1 MHz  
pF  
220.0  
pF  
REVISION 09/25/2001  
POLYFET RF DEVICES  
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com  
12

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