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SM6T200A PDF预览

SM6T200A

更新时间: 2024-11-25 22:43:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 瞬态抑制器二极管光电二极管局域网
页数 文件大小 规格书
5页 188K
描述
TRANSILTM

SM6T200A 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:DO-214AA包装说明:R-PDSO-C2
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.50
Factory Lead Time:17 weeks风险等级:1.45
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:179892Samacsys Pin Count:2
Samacsys Part Category:DiodeSamacsys Package Category:Other
Samacsys Footprint Name:SMBSamacsys Released Date:2015-07-22 14:41:32
Is Samacsys:N其他特性:UL RECOGNIZED
最大击穿电压:210 V最小击穿电压:190 V
击穿电压标称值:200 V最大钳位电压:353 V
配置:SINGLE最小二极管电容:350 pF
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-214AAJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:4000 W元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性:UNIDIRECTIONAL
最大功率耗散:5 W认证状态:Not Qualified
最大重复峰值反向电压:171 V最大反向电流:5 µA
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn) - annealed
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

SM6T200A 数据手册

 浏览型号SM6T200A的Datasheet PDF文件第2页浏览型号SM6T200A的Datasheet PDF文件第3页浏览型号SM6T200A的Datasheet PDF文件第4页浏览型号SM6T200A的Datasheet PDF文件第5页 
SM6T6V8A/220A  
®
SM6T6V8CA/220CA  
TRANSILTM  
FEATURES  
PEAK PULSE POWER : 600 W (10/1000µs)  
BREAKDOWN VOLTAGE RANGE :  
From 6.8V to 220 V.  
UNI AND BIDIRECTIONAL TYPES  
LOW CLAMPING FACTOR  
FAST RESPONSE TIME  
UL RECOGNIZED  
DESCRIPTION  
SMB  
(JEDEC D0-214AA)  
Transil diodes provide high overvoltage protection  
by clamping action. Their instantaneous response  
to transient overvoltages makes them particu-  
larly suited to protect voltage sensitive devices  
such as MOS Technology and low voltage sup-  
plied IC’s.  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)  
Symbol  
PPP  
Parameter  
Peak pulse power dissipation (see note 1)  
Power dissipation on infinite heatsink  
Value  
600  
5
Unit  
W
Tj initial = Tamb  
amb = 50°C  
P
T
W
IFSM  
Non repetitive surge peak forward  
current for unidirectional types  
tp = 10ms  
Tj initial = Tamb  
100  
A
Tstg  
Tj  
Storage temperature range  
Maximum junction temperature  
- 65 to + 175  
150  
°C  
°C  
TL  
Maximum lead temperature for soldering during 10 s.  
260  
°C  
Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit.  
THERMAL RESISTANCES  
Symbol  
Rth (j-l)  
Parameter  
Value  
20  
Unit  
°C/W  
°C/W  
Junction to leads  
Rth (j-a)  
Junction to ambient on printed circuit on recommended pad  
layout  
100  
August 2001- Ed: 5A  
1/5  

SM6T200A 替代型号

型号 品牌 替代类型 描述 数据表
P6SMB200A-E3/52 VISHAY

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与SM6T200A相关器件

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SM6T200A/2-E3 VISHAY

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DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMC, 2 PIN, Transient
SM6T200A/5 VISHAY

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Trans Voltage Suppressor Diode, 600W, 171V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SM6T200A/51-E3 VISHAY

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DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN, Transient
SM6T200A/52-E3 VISHAY

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SM6T200A/5B VISHAY

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Trans Voltage Suppressor Diode, 171V V(RWM), Unidirectional,
SM6T200A/CA STMICROELECTRONICS

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TransilTM
SM6T200A-E3 VISHAY

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DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN, Transient
SM6T200A-E3/51 VISHAY

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Trans Voltage Suppressor Diode, 600W, 171V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SM6T200A-E3/52 VISHAY

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TVS DIODE 171V 274V DO214AA
SM6T200A-E3/5B VISHAY

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DIODE 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2