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SM6T150A2

更新时间： 2024-11-24 00:19:11
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 128K
描述
Surface Mount TRANSZORB Transient Voltage Suppressors

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SM6T150A2 数据手册

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SM6T Series  
Vishay General Semiconductor  
www.vishay.com  
®
Surface Mount TRANSZORB  
Transient Voltage Suppressors  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Glass passivated chip junction  
• Available in uni-directional and bi-directional  
• 600 W peak pulse power capability with a  
10/1000 μs waveform  
• Excellent clamping capability  
• Low inductance  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
DO-214AA (SMBJ)  
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
VWM  
5.80 V to 188 V  
TYPICAL APPLICATIONS  
V
BR uni-directional  
6.8 V to 220 V  
6.8 V to 220 V  
600 W  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
V
BR bi-directional  
PPPM  
PD  
5.0 W  
I
FSM (uni-directional only)  
100 A  
MECHANICAL DATA  
TJ max.  
150 °C  
Case: DO-214AA (SMBJ)  
Polarity  
Uni-directional, bi-directional  
DO-214AA (SMBJ)  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant and commercial grade  
Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified  
Package  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
DEVICES FOR BI-DIRECTION APPLICATIONS  
For bi-directional devices use CA suffix (e.g. SM6T12CA).  
Electrical characteristics apply in both directions.  
Polarity: For uni-directional types the band denotes  
cathode end, no marking on bi-directional types  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
VALUE  
600  
UNIT  
W
Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1) (fig. 3)  
Power dissipation on infinite heatsink at TA = 50 °C  
Peak forward surge current 10 ms single half sine-wave uni-directional only (2)  
Operating junction and storage temperature range  
IPPM  
See next table  
5.0  
A
PD  
W
IFSM  
100  
A
TJ, TSTG  
- 65 to + 150  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2.  
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal  
(2)  
Revision: 13-Dec-13  
Document Number: 88385  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
123456

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