SM6A27T
Vishay General Semiconductor
www.vishay.com
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• TJ = 175 °C capability suitable for high reliability
and automotive requirement
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification
DO-218 Compatible
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
VWM
22 V
27 V
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
VBR
P
PPM (10 x 1000 μs)
4600 W
6 W
PD
MECHANICAL DATA
IRSM
90 A
Case: DO-218AC
IFSM
600 A
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
TJ max.
Polarity
Package
175 °C
Uni-directional
DO-218AC
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: Heatsink is anode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
PPPM
VALUE
4600
6.0
UNIT
W
Peak pulse power dissipation with 10/1000 μs waveform
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)
PD
W
Non-repetitive peak reverse surge current for 10 μs/10 ms exponentially
decaying waveform
IRSM
90
A
Maximum working stand-off voltage
VWM
IFSM
22.0
600
V
A
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
TJ, TSTG
-55 to +175
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
BREAKDOWN VOLTAGE
TEST CURRENT
STAND-OFF VOLTAGE
VBR AT IT
(V)
DEVICE TYPE
IT
VWM
(V)
(mA)
MIN.
MAX.
SM6A27T
24
30
10
22
Revision: 24-Mar-15
Document Number: 87914
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000