5秒后页面跳转
SM5S33AHE3 PDF预览

SM5S33AHE3

更新时间: 2024-01-25 06:31:16
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 87K
描述
Surface Mount PAR Transient Voltage Suppressors

SM5S33AHE3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PSSO-C1Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.69其他特性:HIGH RELIABILITY, PD-CASE
最大击穿电压:40.6 V最小击穿电压:36.7 V
外壳连接:ANODE配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:DO-218ABJESD-30 代码:R-PSSO-C1
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值反向功率耗散:3600 W元件数量:1
端子数量:1最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245极性:UNIDIRECTIONAL
最大功率耗散:5 W参考标准:AEC-Q101
最大重复峰值反向电压:33 V表面贴装:YES
技术:AVALANCHE端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:C BEND端子位置:SINGLE
处于峰值回流温度下的最长时间:30Base Number Matches:1

SM5S33AHE3 数据手册

 浏览型号SM5S33AHE3的Datasheet PDF文件第2页浏览型号SM5S33AHE3的Datasheet PDF文件第3页浏览型号SM5S33AHE3的Datasheet PDF文件第4页浏览型号SM5S33AHE3的Datasheet PDF文件第5页 
SM5S10 thru SM5S36A  
Vishay General Semiconductor  
www.vishay.com  
Surface Mount PAR® Transient Voltage Suppressors  
High Temperature Stability and High Reliability Conditions  
FEATURES  
• Junction passivation optimized design passivated  
anisotropic rectifier technology  
• TJ = 175 °C capability suitable for high reliability  
and automotive requirement  
• Available in uni-directional polarity only  
• Low leakage current  
• Low forward voltage drop  
DO-218AB  
• High surge capability  
• Meets ISO7637-2 surge specification (varied by test  
condition)  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
245 °C  
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
PRIMARY CHARACTERISTICS  
VWM  
10 V to 36 V  
3600 W  
2800 W  
5 W  
TYPICAL APPLICATIONS  
P
PPM (10 x 1000 μs)  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lighting,  
especially for automotive load dump protection application.  
P
PPM (10 x 10 000 μs)  
PD  
IFSM  
500 A  
TJ max.  
175 °C  
MECHANICAL DATA  
Case: DO-218AB  
Molding compound meets UL 94 V-0 flammability rating  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
HE3 suffix meets JESD 201 class 2 whisker test  
Polarity: Heatsink is anode  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
with 10/1000 μs waveform  
Peak pulse power dissipation  
3600  
PPPM  
PD  
W
with 10/10 000 μs waveform  
2800  
5.0  
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)  
Peak pulse current with 10/1000 μs waveform  
W
A
(1)  
IPPM  
See next table  
Peak forward surge current 8.3 ms single half sine-wave  
Operating junction and storage temperature range  
IFSM  
500  
A
TJ, TSTG  
- 55 to + 175  
°C  
Note  
(1)  
Non-repetitive current pulse at TA = 25 °C  
Revision: 14-Sep-11  
Document Number: 88382  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SM5S33AHE3相关器件

型号 品牌 获取价格 描述 数据表
SM5S33AHE3_A/I VISHAY

获取价格

Trans Voltage Suppressor Diode, 3600W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-
SM5S33AQ YANGJIE

获取价格

DO-218AB
SM5S33ATHE3/I VISHAY

获取价格

TVS DIODE 33V 53.3V DO218AC
SM5S33A-TP-HF MCC

获取价格

Trans Voltage Suppressor Diode,
SM5S33CA SUNMATE

获取价格

3600W patch TVS transient suppression diode DO-218 33V
SM5S33CAD SOCAY

获取价格

Surface Mount Transient Voltage Suppressors (TVS)
SM5S33CAQ YANGJIE

获取价格

DO-218AB
SM5S33HE3/2D VISHAY

获取价格

DIODE 3600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB, ROHS COMPLIANT, PLASTIC PACKAG
SM5S36 VISHAY

获取价格

Surface Mount Automotive Transient Voltage Suppressors
SM5S36/2D VISHAY

获取价格

Trans Voltage Suppressor Diode, 3600W, 36V V(RWM), Unidirectional, 1 Element, Silicon, DO-