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SM5A27HM3 PDF预览

SM5A27HM3

更新时间: 2024-11-25 17:01:15
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 161K
描述
Surface-Mount PAR? Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions

SM5A27HM3 数据手册

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SM5A27HM3  
Vishay General Semiconductor  
www.vishay.com  
Surface-Mount PAR® Transient Voltage Suppressors  
High Temperature Stability and High Reliability Conditions  
FEATURES  
• Junction  
passivation  
optimized  
design  
passivated anisotropic rectifier technology  
• TJ = 175 °C capability suitable for high reliability  
and automotive requirement  
• Low leakage current  
• Low forward voltage drop  
• High surge capability  
DO-218 Compatible  
• Meets ISO 7637-2 surge specification  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 245 °C  
Anode  
Cathode  
• AEC-Q101 qualified  
LINKS TO ADDITIONAL RESOURCES  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Related  
Documents  
Packages  
Marking  
TYPICAL APPLICATIONS  
Use in sensitive electronics protection against voltage  
transients induced by inductive load switching and lightning,  
especially for automotive load dump protection application.  
PRIMARY CHARACTERISTICS  
VBR  
27 V  
3600 W  
2800 W  
5 W  
PPPM (10 x 1000 μs)  
MECHANICAL DATA  
P
PPM (10 x 10 000 μs)  
Case: DO-218AC  
Molding compound meets UL 94 V-0 flammability rating  
Base P/NHM3 - RoHS-compliant, AEC-Q101 qualified  
PD  
VWM  
22 V  
IPPM  
70 A  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
IFSM  
500 A  
TJ max.  
Polarity  
Package  
175 °C  
Unidirectional  
DO-218AC  
HM3 suffix meets JESD 201 class 2 whisker test  
Polarity: heatsink is anode  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
3600  
2800  
5.0  
UNIT  
with 10/1000 μs waveform  
Peak pulse power dissipation  
PPPM  
W
with 10/10 000 μs waveform  
Power dissipation on infinite heatsink at TA = 25 °C (fig. 1)  
PD  
W
A
Non-repetitive peak reverse surge current for 10 μs/10 ms  
exponentially decaying waveform  
IPPM  
70  
Maximum working stand-off voltage  
VWM  
IFSM  
22.0  
500  
V
A
Peak forward surge current 8.3 ms single half sine-wave  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +175  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
BREAKDOWN VOLTAGE  
TEST CURRENT  
STAND-OFF VOLTAGE  
VBR AT IT  
(V)  
DEVICE TYPE  
SM5A27HM3  
IT  
VWM  
(V)  
(mA)  
MIN.  
MAX.  
24  
30  
10  
22  
Revision: 16-Jan-2024  
Document Number: 98640  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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