Datasheet > SM5822

SM5822

更新时间： 2024-10-01 12:57:15

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	411K
描述
3.0A Patch Schottky diode 40V SMC series

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数据手册

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SM5822 数据手册

SM5820 - SM5822

SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE RANGE: 20 - 40V

CURRENT: 3.0 A

Features

Schottky Barrier Chip

Ideally Suited for Automatic Assembly

Low Power Loss, High Efficiency

For Use in Low Voltage Application

Guard Ring Die Construction

SMC/DO-214AB

Plastic Case Material has UL Flammability

Dim

Min

5.59

6.60

2.75

0.15

7.75

0.10

0.76

2.00

Max

6.22

7.11

3.18

0.31

8.13

0.20

1.52

2.62

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Mechanical Data

Case: SMC/DO-214AB, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Weight: 0.21 grams (approx.)

All Dimensions in mm

Maximum Ratings and Electrical Characteristics

T_A= 25ꢀC unless otherwise specified

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Unit

Characteristic

Symbol

SM5820

SM5821

SM5822

Maximumrecurrent peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

Maximum average forw ard rectified current

@T_L=90

3.0

I_F(AV)

Peak forw ard surge current

8.3ms single half-sine-w ave

I_FSM

V_F

I_R

80.0

superimposed on rated load @T_J=125

Maximum instantaneous forw ard voltage @ 3.0A

0.475

0.85

0.50

0.90

2.0

0.525

0.95

(Note 1)

@ 9.4A

@T_A=25

Maximumreverse current

at rated DC blocking voltage @T_A=100

Typical junction capacitance (Note2)

20.0

250

C_J

R_θJA

T_J

Typical thermal resistance

(Note3)

Operating junction temperature range

Storage temperature range

- 55 ---- + 125

T_STG

- 55 ---- + 150

NOTE: 1. Pulse test : 300 s pulse width,1% duty cycle.

2. Measured at 1.0MHz and applied rev erse voltage of 4.0V DC.

3.Thermal resistance junction to ambient

1 of 2

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