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SM5817 PDF预览

SM5817

更新时间: 2024-10-28 22:43:07
品牌 Logo 应用领域
美丽微 - FORMOSA 二极管
页数 文件大小 规格书
2页 70K
描述
Silicon epitaxial planer type

SM5817 数据手册

 浏览型号SM5817的Datasheet PDF文件第2页 
MELF Schottky Barrier Diodes  
Formosa MS  
SM5817 THRU SM5819  
Silicon epitaxial planer type  
Features  
SM-1  
Plastic package has Underwriters Laboratory  
FlammabilityClassification 94V-O Utilizing Flame  
RetardantEpoxy Molding Compound.  
For surface mounted applications.  
SOLDERABLE  
ENDS  
.205(5.2)  
.190(4.8)  
.024(.60)  
.018(.46)  
Exceeds environmental standards of MIL-S-19500 /  
228  
.105(2.7)  
.095(2.4)  
Low leakage current.  
Dimensions in inches and (millimeters)  
Mechanical data  
Case : Molded plastic, SM-1 (MELF)  
Terminals : Solder plated, solderable per MIL-STD-750,  
Method 2026  
Polarity : Indicated by c athode band  
Mounting Position : Any  
Weight : 0.015 gram  
o
MAXIMUM RATINGS (AT TA=25 C unless otherwise noted)  
PARAMETER  
CONDITIONS  
Symbol  
IO  
MIN.  
TYP.  
MAX.  
1.0  
UNIT  
A
Forward rectified current  
See Fig.2  
8.3ms single half sine-wave superimposed on  
rate load (JEDEC methode)  
Forward surge current  
IFSM  
25  
A
o
VR = VRRM TA = 25 C  
1.0  
10  
mA  
mA  
Reverse current  
IR  
o
VR = VRRM TA = 100 C  
o
Thermal resistance  
Junction to ambient  
Rq  
80  
C / w  
pF  
JA  
Diode junction capacitance  
Storage temperature  
f=1MHz and applied 4vDC reverse voltage  
CJ  
110  
o
TSTG  
-55  
+150  
C
Operating  
*1  
*2  
*3  
*4  
MARKING  
SYMBOLS  
VRRM  
VRMS  
VR  
VF  
temperature  
CODE  
o
( C)  
*1 Repetitive peak reverse voltage  
*2 RMS voltage  
(V)  
(V)  
(V)  
(V)  
SM5817  
SM5818  
SM5819  
-
-
-
20  
30  
40  
14  
21  
28  
20  
30  
40  
0.45  
0.55  
0.60  
*3 Continuous reverse voltage  
*4 Maximum forward voltage  
-55 to +125  

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