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SM260MH PDF预览

SM260MH

更新时间: 2024-09-23 06:12:03
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描述
2.0 Amp Surface Mount Schottky Barrier Rectifiers

SM260MH 数据手册

 浏览型号SM260MH的Datasheet PDF文件第2页 
SM220MH~SM2100MH  
20 ~ 100 V  
2.0 Amp Surface Mount Schottky Barrier Rectifiers  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen-free and RoHS Compliant  
FEATURES  
z Batch process design, excellent power dissipation offers.  
better reverse leakage current and thermal resistance.  
z Low profile surface mounted application.  
in order to optimize board space.  
SOD-123MH  
z Low power loss and low forward voltage drop  
z High surge, high current capability, and high efficiency.  
z Fast switching for high efficiency.  
z Guard-ring for overvoltage protection.  
z Ultra high-speed switching  
A
D
B
F
z Silicon epitaxial planar chip, metal silicon junction.  
C
PACKAGING INFORMATION  
E
E
z Small plastic SMD package.  
z Case: Molded plastic  
Millimeter  
Millimeter  
Min. Max.  
3.10 (MAX.)  
0.80 (TYP.)  
0.30 (TYP.)  
REF.  
REF.  
Min.  
Max.  
3.70  
1.80  
1.00  
A
B
C
3.30  
1.40  
0.60  
D
E
F
z Epoxy: UL94-V0 rate flame retardant  
1
z Weight: 0.0110 g (Approximately)  
Cathode  
2
Anode  
MARKING CODE  
Part Number  
SM220MH  
SM230MH  
SM240MH  
SM250MH  
Marking Code  
Part Number  
SM260MH  
SM280MH  
SM2100MH  
Marking Code  
22  
23  
24  
25  
26  
28  
20  
MAXIMUM RATINGS (T = 25°C unless otherwise specified.)  
a
PART NUMBERS  
SYMBOL  
UNITS  
TESTING CONDITIONS  
SM  
220  
MH  
SM  
230  
MH  
SM  
240  
MH  
SM  
250  
MH  
SM  
260  
MH  
SM  
280  
MH  
SM  
2100  
MH  
PARAMETERS  
Recurrent Peak  
Reverse Voltage (Max.)  
VRRM  
20  
30  
40  
50  
60  
80  
100  
V
RMS Voltage (Max.)  
VRMS  
VR  
14  
20  
21  
30  
28  
40  
35  
50  
42  
60  
56  
80  
70  
V
V
V
Reverse Voltage (Max.)  
Forward Voltage (Max.)  
100  
VF  
0.50  
0.70  
0.85  
Forward  
Rectified Current (Max.)  
IO  
2.0  
See Fig.1  
A
A
8.3ms single half sine-wave  
superimposed on rated load  
(JEDEC method)  
Peak Forward Surge Current  
Reverse Current (Max.)  
IFSM  
40  
VR=VRRM, T =25°C  
0.5  
10  
85  
a
IR  
RθJA  
mA  
°C/W  
pF  
VR=VRRM, T =125°C  
a
Thermal Resistance (Typ.)  
Diode Junction  
Junction to ambient  
f=1MHz and applied 4V DC  
reverse voltage  
CJ  
160  
Capacitance (Typ.)  
Storage and Operating  
Temperature Range  
TSTG, TJ  
-65 ~ 175, -55 to 125  
-65 ~ 175, -55 to 150  
°C  
01-December-2008 Rev. A  
Page 1 of 2  

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