SM220MH~SM2100MH
20 ~ 100 V
2.0 Amp Surface Mount Schottky Barrier Rectifiers
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen-free and RoHS Compliant
FEATURES
z Batch process design, excellent power dissipation offers.
better reverse leakage current and thermal resistance.
z Low profile surface mounted application.
in order to optimize board space.
SOD-123MH
z Low power loss and low forward voltage drop
z High surge, high current capability, and high efficiency.
z Fast switching for high efficiency.
z Guard-ring for overvoltage protection.
z Ultra high-speed switching
A
D
B
F
z Silicon epitaxial planar chip, metal silicon junction.
C
PACKAGING INFORMATION
E
E
z Small plastic SMD package.
z Case: Molded plastic
Millimeter
Millimeter
Min. Max.
3.10 (MAX.)
0.80 (TYP.)
0.30 (TYP.)
REF.
REF.
Min.
Max.
3.70
1.80
1.00
A
B
C
3.30
1.40
0.60
D
E
F
z Epoxy: UL94-V0 rate flame retardant
1
z Weight: 0.0110 g (Approximately)
Cathode
2
Anode
MARKING CODE
Part Number
SM220MH
SM230MH
SM240MH
SM250MH
Marking Code
Part Number
SM260MH
SM280MH
SM2100MH
Marking Code
22
23
24
25
26
28
20
MAXIMUM RATINGS (T = 25°C unless otherwise specified.)
a
PART NUMBERS
SYMBOL
UNITS
TESTING CONDITIONS
SM
220
MH
SM
230
MH
SM
240
MH
SM
250
MH
SM
260
MH
SM
280
MH
SM
2100
MH
PARAMETERS
Recurrent Peak
Reverse Voltage (Max.)
VRRM
20
30
40
50
60
80
100
V
RMS Voltage (Max.)
VRMS
VR
14
20
21
30
28
40
35
50
42
60
56
80
70
V
V
V
Reverse Voltage (Max.)
Forward Voltage (Max.)
100
VF
0.50
0.70
0.85
Forward
Rectified Current (Max.)
IO
2.0
See Fig.1
A
A
8.3ms single half sine-wave
superimposed on rated load
(JEDEC method)
Peak Forward Surge Current
Reverse Current (Max.)
IFSM
40
VR=VRRM, T =25°C
0.5
10
85
a
IR
RθJA
mA
°C/W
pF
VR=VRRM, T =125°C
a
Thermal Resistance (Typ.)
Diode Junction
Junction to ambient
f=1MHz and applied 4V DC
reverse voltage
CJ
160
Capacitance (Typ.)
Storage and Operating
Temperature Range
TSTG, TJ
-65 ~ 175, -55 to 125
-65 ~ 175, -55 to 150
°C
01-December-2008 Rev. A
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