Datasheet > SLW_H3103

SLW_H3103

更新时间： 2024-09-25 18:09:47

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
10页	1730K
描述
TO-247&TO-3P

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SLW_H3103 数据手册

SLW3103 / SLH3103

260V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Maple semi‘s

This Power MOSFET is produced using Msemitek‘s

advanced planar stripe DMOS technology.

- 40A, 260V, R_{DS(on) typ.}= 0.12Ω@V_GS= 10 V

- Low gate charge ( typical 55 nC)

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

avalanche and commutation mode.

suited for high efficiency switched mode power supplies,

These devices are well suited for AC/DC power conversion

active power factor correction based on half bridge topology.

in switching mode operation for higher efficiency.

TO-247

TO-3P

SLH3103

SLW3103

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLW3103

SLH3103

Units

Drain-Source Voltage

260

V_DSS

Drain Current

- Continuous (T_C= 25℃)

- Continuous (T_C= 100℃)

- Pulsed

40 *

20 *

I_D

(Note 1)

I_DM

V_GSS

EAS

I_AR

Drain Current

130

130 *

ꢀ

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

1120

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25℃)

25.6

4.5

V/ns

dv/dt

41.8

0.34

P_D

- Derate above 25℃

2.05

W/℃

℃

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

300

Maximum lead temperature for soldering purposes,

T_L

℃

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_θJC

Parameter

SLW3103

0.49

SLH3103

3.0

Units

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

0.5

R_θJS

62.5

R_θJA

Rev. 1.0 Nov . 2019

Msemitek Co., Ltd

http://www.msemitek.com

12 3 4 5 6 7...10

中文翻译

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