Datasheet > SLW24N50C

SLW24N50C

更新时间： 2024-11-18 18:09:35

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描述
TO-3P

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SLW24N50C 数据手册

SLW24N50C

500V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Maple semi‘s

advanced planar stripe DMOS technology.

- 25A, 500V, R_DS(on)typ.= 167mΩ@V_GS= 10 V

- Low gate charge ( typical 96nC)

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge topology.

TO-3P

G D S

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLW24N50C

500

Units

Drain-Source Voltage

V_DSS

Drain Current

- Continuous (T = 25

)

25.0

℃

I_D

- Continuous (T = 100

)

15.2

℃

(Note 1)

I_DM

V_GSS

EAS

I_AR

Drain Current

- Pulsed

101

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

628

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

32.06

4.5

V/ns

dv/dt

Power Dissipation (T = 25

)

320

℃

P_D

- Derate above 25

2.57

℃

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

℃

Maximum lead temperature for soldering purposes,

T_L

300

℃

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_θJC

Parameter

SLW24N50C

0.39

Units

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

℃

0.5

R_θJS

62.5

R_θJA

Maple Semiconductor CO., LTD

http://www.maplesemi.com

Rev. 00 January. 2015

12 3 4 5 6

中文翻译

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