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SLT13N50A

更新时间: 2024-11-26 18:09:35
品牌 Logo 应用领域
美浦森 - Maplesemi /
页数 文件大小 规格书
8页 1447K
描述
PTO-252

SLT13N50A 数据手册

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SLT13N50A  
500V N-Channel MOSFET  
General Description  
Features  
This Power MOSFET is produced using Msemitek‘s  
advanced planar stripe DMOS technology.  
- 13A, 500V, RDS(on) = 0.52Ω@VGS = 10 V  
- Low gate charge ( typical 19.1nC)  
- Low Crss ( typical 4.6pF  
- High ruggedness  
- Fast switching  
- 100% avalanche tested  
- Improved dv/dt capability  
This advanced technology has been especially tailored  
to minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switched mode power supplies,  
active power factor correction based on half bridge topology.  
D
PTO-252  
G
S
Absolute Maximum Ratings  
TC = 25°C unless otherwise noted  
Symbol  
Parameter  
Drain-Source Voltage  
SLT13N50A  
Units  
VDSS  
500  
13  
V
A
A
A
V
Drain Current - Continuous (TC= 25°C)  
- Continuous (TC= 100°C)  
I
D
6.4*  
40*  
±30  
I
Drain Current - Pulsed (Note 1)  
Gate-Source Voltage  
DM  
V
GSS  
E
Single Pulsed Avalanche Energy (Note 2)  
Avalanche Current (Note 1)  
346  
10  
41  
5
mJ  
A
AS  
I
AR  
E
Repetitive Avalanche Energy (Note 1)  
Peak Diode Recovery dv/dt (Note 3)  
mJ  
V/ns  
AR  
dv/dt  
100  
W
Power Dissipation (TC = 25°C)  
- Derate above 25°C  
PD  
0.8  
W/°C  
T T  
Operating and Storage Temperature Range  
Maximum lead temperature for soldering  
purposes,1/8" from case for 5 seconds  
-55 to +150  
oC  
j , stg  
T
300  
oC  
L
* Drain current limited by maximum junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
SLT13N50A  
Units  
RθJC  
Thermal Resistance, Junction-to-Case  
1.25  
°C/W  
RθJS  
RθJA  
Thermal Resistance, Case-to-Sink Typ.  
Thermal Resistance, Junction-to-Ambient  
--  
°C/W  
°C/W  
45  
Msemitek Co., Ltd  
http://www.msemitek.com  
Rev. 1.0 Apr. 2023  

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