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SLS50N06G PDF预览

SLS50N06G

更新时间: 2024-10-15 18:09:51
品牌 Logo 应用领域
美浦森 - Maplesemi /
页数 文件大小 规格书
8页 1023K
描述
SOP-8

SLS50N06G 数据手册

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SLS50N06G  
60V N-Channel MOSFET  
General Description  
Features  
This Power MOSFET is produced using Msemitek‘s  
advanced Shielding Gate MOSFET technology.  
- 50A, 60V, RDS(on)Typ = 10.3mΩ@VGS = 10 V  
- Very Low On-resistance RDS(ON)  
- High ruggedness  
- Fast switching  
- 100% avalanche tested  
- Improved dv/dt capability  
This advanced technology has been especially tailored  
to minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for low voltage applications such as DC/DC  
converters and high efficiency switching for power  
management in portable and battery operated products.  
SOP-8  
D
S
S
S
D
D
D
G
D
G
S
Absolute Maximum Ratings  
TC = 25°C unless otherwise noted  
Symbol  
Parameter  
SLS50N06G  
Units  
V
Drain-Source Voltage  
60  
50  
VDSS  
Drain Current  
- Continuous (TC = 25)  
A
ID  
- Continuous (TC = 100)  
33  
A
(Note 1)  
(Note 2)  
IDM  
VGSS  
EAS  
Drain Current  
- Pulsed  
200  
A
Gate-Source Voltage  
20  
±
V
Single Pulsed Avalanche Energy  
Power Dissipation (TC = 25)  
60  
mJ  
W
PD  
52  
2.4  
R θJC  
TJ, TSTG  
Thermal Resistance, Junction to Case  
Operating and Storage Temperature Range  
W/℃  
-55 to +150  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
TL  
300  
* Drain current limited by maximum junction temperature.  
Msemitek Co., Ltd  
http://www.msemitek.com  
Rev. 1.0 Aug. 2022  

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