Datasheet > SLP_F13N50A

SLP_F13N50A

更新时间： 2024-10-15 18:10:03

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
9页	1236K
描述
TO-220C&TO-220F

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SLP_F13N50A 数据手册

SLP13N50A / SLF13N50A

500V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Msemitek‘s

advanced planar stripe DMOS technology.

- 13A, 500V, R_DS(on)= 0.42Ω@V_GS= 10 V

- Low gate charge ( typical 19.1nC)

- Low Crss ( typical 4.6pF）

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge topology.

TO-220

TO-220F

G D S

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

Drain-Source Voltage

SLP13N50A

SLF13N50A

Units

VDSS

500

Drain Current - Continuous (TC= 25°C)

- Continuous (TC= 100°C)

6.4*

Drain Current - Pulsed (Note 1)

Gate-Source Voltage

40*

± 30

GSS

Single Pulsed Avalanche Energy (Note 2)

Avalanche Current (Note 1)

346

Repetitive Avalanche Energy (Note 1)

Peak Diode Recovery dv/dt (Note 3)

V/ns

dv/dt

32.5

0.26

Power Dissipation (TC = 25°C)

- Derate above 25°C

P_D

W/°C

T T

Operating and Storage Temperature Range

Maximum lead temperature for soldering

purposes,1/8" from case for 5 seconds

-55 to +150

300

^oC

j , stg

^oC

* Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol

Parameter

SLP13N50A

SLF13N50A

Units

R_θJC

Thermal Resistance, Junction-to-Case

4.0

°C/W

R_θJS

R_θJA

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

°C/W

47.8

Msemitek Co., Ltd

http://www.msemitek.com

Rev. 1.2.1 Apr. 2020

12 3 4 5 6 7...9

中文翻译

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