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SLP3103/SLF3103 PDF预览

SLP3103/SLF3103

更新时间: 2024-09-16 18:09:47
品牌 Logo 应用领域
美浦森 - Maplesemi /
页数 文件大小 规格书
10页 1844K
描述
TO-220C&TO-220F

SLP3103/SLF3103 数据手册

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SLP3103 / SLF3103  
260V N-Channel MOSFET  
General Description  
Features  
This Power MOSFET is produced using Msemitek‘s  
advanced planar stripe DMOS technology.  
- 40A, 260V, RDS(on) typ. = 0.12Ω@VGS = 10 V  
- Low gate charge ( typical 47 nC)  
- High ruggedness  
- Fast switching  
- 100% avalanche tested  
- Improved dv/dt capability  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switched mode power supplies,  
active power factor correction based on half bridge topology.  
D
G
TO-220C  
S
Absolute Maximum Ratings  
TC = 25°C unless otherwise noted  
Symbol  
VDSS  
Parameter  
SLP3103  
SLF3103  
Units  
V
Drain-Source Voltage  
260  
Drain Current  
- Continuous (TC = 25)  
- Continuous (TC = 100)  
- Pulsed  
40  
20  
40 *  
20 *  
A
ID  
A
(Note 1)  
IDM  
VGSS  
EAS  
IAR  
Drain Current  
130  
130 *  
A
Gate-Source Voltage  
30  
V
±
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
260  
40  
mJ  
A
EAR  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (TC = 25)  
25.6  
4.5  
mJ  
V/ns  
W
dv/dt  
256  
41.8  
0.34  
PD  
- Derate above 25℃  
2.05  
W/℃  
TJ, TSTG  
Operating and Storage Temperature Range  
-55 to +150  
300  
Maximum lead temperature for soldering purposes,  
TL  
1/8" from case for 5 seconds  
* Drain current limited by maximum junction temperature.  
Thermal Characteristics  
Symbol  
RθJC  
Parameter  
SLP3103  
0.49  
SLF3103  
3.0  
Units  
/W  
/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
62.5  
62.5  
RθJA  
Rev. 2.2 May . 2023  
Msemitek Co., Ltd  
http://www.msemitek.com  

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