Datasheet > SLP120N08G2

SLP120N08G2

更新时间： 2024-09-17 18:09:31

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
6页	824K
描述
TO-220

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中文翻译

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数据手册

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SLP120N08G2 数据手册

LEAD FREE

RoHS

SLB120N08G2/SLP120N08G2

85V N -Channel MOSFET

Features

General Description

- N-Channel:85V 120A

This Power MOSFET is produced using Maple semi‘s

R_DS(on)Typ= 4.5mΩ@V_GS= 10 V

advanced planar stripe SGT technology.

This advanced technology has been especially tailored to

minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

- Very Low On-resistance RDS(ON)

- LowCrss

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

Application

Motor Drives

 DC/DC convertion

 Power Management

TO-263

TO-220C

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLB120N08G2/SLP120N08G2 Units

Drain-Source Voltage

V_DSS

Drain Current

- Continuous (T_C= 25℃)

- Continuous (T_C= 100℃)

- Pulsed

120

100

480

I_D

(Note 1)

I_DM

V_GSS

E_AS

Drain Current

Gate-Source Voltage

Single Pulsed Avalanche Energy

Power Dissipation (T_C= 25℃)

P_D

220

R _θJC

R _θJA

T_J, T_STG

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to ambient

Operating and Storage Temperature Range

℃/W

℃

0.7

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

T_L

300

℃

* Drain current limited by maximum junction temperature.

MAPLESEMI CONDUCTOR CO., LTD

http://www.maplesemi.com

Rev1.0 Apr. 2020

12 3 4 5 6

中文翻译

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