Datasheet > SLP120N06T

SLP120N06T

更新时间： 2024-09-17 18:09:23

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
8页	1041K
描述
TO-220C

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SLP120N06T 数据手册

SLP120N06T

60V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Msemitek‘s

- 120A, 60V, R_DS(on)Typ= 4.4mΩ@V_GS= 10 V

- Very Low On-resistance RDS(ON)

- High ruggedness

- Fast switching

- 100% avalanche tested

advanced TRENCH technology.

This advanced technology has been especially tailored

to minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

- Improved dv/dt capability

Application

PWM Application

Load Switch

Power Management

TO-220C

SLP120N06T

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLP120N06T

Units

Drain-Source Voltage

120

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

(Note 1)

(Note 2)

I_DM

V_GSS

EAS

P_D

Drain Current

- Pulsed

360

Gate-Source Voltage

Single Pulsed Avalanche Energy

Power Dissipation (T_C= 25℃)

500

325

Thermal Resistance, Junction-to-Case

0.4

℃/W

R_θJC

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

℃

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

T_L

300

℃

* Drain current limited by maximum junction temperature.

Msemitek Co., Ltd

http://www.msemitek.com

Rev. 2.0 Sep. 2022

12 3 4 5 6 7 8

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