Datasheet > SLN30N03T

SLN30N03T

更新时间： 2024-11-20 18:09:35

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
8页	1070K
描述
DFN3*3

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中文翻译

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数据手册

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SLN30N03T 数据手册

SLN30N03T

30V N -Channel MOSFET

Features

General Description

- N-Channel:30V 30A

This Power MOSFET is produced using Msemitek‘s

R_DS(on)Typ= 6.0mΩ@V_GS= 10 V

R_DS(on))Typ= 9.5mΩ@V_GS= 4.5V

advanced TRENCH technology.

This advanced technology has been especially tailored to

minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

- Very Low On-resistance R_DS(ON)

- Low Crss

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

Application

 PWM Application

 Load Switch

 Power Management

DFN3*3

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLN30N03T

Units

Drain-Source Voltage

V_DSS

Drain Current

- Continuous (T_C= 25℃)

- Continuous (T_C= 100℃)

- Pulsed

I_D

(Note 1)

(Note 2)

I_DM

V_GSS

E_AS

Drain Current

120

Gate-Source Voltage

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak diode recovery dv/dt

121

V/ns

E_AR

d_V/d_t

P_D

Power Dissipation (T_C= 25℃)

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

R _θJC

T_J, T_STG

10.4

℃/W

℃

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

T_L

300

℃

* Drain current limited by maximum junction temperature.

Msemitek Co., Ltd

http://www.msemitek.com

Rev2.0 Mar. 2022

12 3 4 5 6 7 8

中文翻译

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