Datasheet > SLN30L3A

SLN30L3A

更新时间： 2024-11-18 18:09:59

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
13页	701K
描述
DFN3*3-D

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中文翻译

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数据手册

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SLN30L3A 数据手册

SLN30L03A

N And P-Channel Enhancement Mode MOSFET

Features

General Description

- N-Channel: 30V 20A

This Power MOSFET is produced using Msemitek‘s

R_DS(on)Typ= 10.5mΩ@V_GS= 10 V

R_DS(on))Typ= 15.5mΩ@V_GS= 4.5V

- P-Channel: -30V- 20A

R_DS(on))Typ= 26mΩ@V_GS= -10 V

R_DS(on))Typ=36mΩ@V_GS= -4.5V

- Very Low On-resistance RDS(ON)

advanced TRENCH technology.

This advanced technology has been especially tailored to

minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

- Low Crss

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

Application

 PWM Application

 Load Switch

 Power Management

N-Channel

P-Channel

DFN3*3 -Double base

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

N-Channel

P-Channel

-30

Units

Drain-Source Voltage

V_DSS

Drain Current

- Continuous (T_C= 25℃)

-20

I_D

- Continuous (T_C= 100℃)

-13

(Note 1)

I_DM

V_GSS

P_D

Drain Current

- Pulsed

120

-60

Gate-Source Voltage

Power Dissipation (T_C= 25℃)

2.7

5.4

2.3

R _θJc

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

℃/W

℃

T_J, T_STG

-55 to +150

300

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

T_L

℃

* Drain current limited by maximum junction temperature.

Msemitek Co., Ltd

http://www.msemitek.com

Rev1.0 Apr. 2022

12 3 4 5 6 7...13

中文翻译

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