Datasheet > SLH60R090E7

SLH60R090E7

更新时间： 2024-11-20 18:09:19

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
8页	898K
描述
TO-247

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SLH60R090E7 数据手册

SLH60R090E7

600V N-Channel

Super-JMOSFET

General Description

Features

This Power MOSFET is produced using Msemitek‘s

advanced Superjunction MOSFET technology.

- 38A, 600V, R_DS(on)=78mΩ@V_GS= 10 V

- Low gate charge(typ. Qg =52nC)

- Ultra high ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies.

TO-247

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLH60R090E7

Units

Drain-Source Voltage

600

38*

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

20.2*

(Note 1)

I_DM

V_GSS

EAS

I_AR

Drain Current

- Pulsed

114*

ꢀ

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

199

5.6

2.6

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

MOSFET dv/dt

dv/dt

V/ns

100

Power Dissipation (T_C= 25℃)

W/℃

℃

P_D

- Derate above 25℃

0.34

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

Maximum lead temperature for soldering purposes,

T_L

260

℃

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_θJC

Parameter

SLH60R090E7

Units

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

2.9

R_θJS

62.5

R_θJA

Msemitek Co., Ltd

http://www.msemitek.com

Rev. 1.0 Oct . 2020

12 3 4 5 6 7 8

中文翻译

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