Datasheet > SLH60R042SS

SLH60R042SS

更新时间： 2024-11-20 18:09:15

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
6页	446K
描述
TO-247

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SLH60R042SS 数据手册

SLH60R042SS

600V N-Channel MOSFET

Features

- 76A, 600V, RDS(on) typ.= 36mΩ@VGS =10 V

General Description

Features

This Power MOSFET is produced using Maple semi‘s

Advanced Super-Junction technology.

- Low gate charge ( typical 142nC)

- High ruggedness

- 7.6A, 500V, R_{DS(on) typ.}= 0.5Ω@V_GS= 10 V

This advanced technology has_-b_Loe_we_gn_ate_es_chp_ae_rgc_ei₍a_tl_yl_py_ict_aa_li₂lo_5nr_Ce₎d

- Fast switching

- High ruggedness

to minimize conduction loss, provide superior switching

- Fast switching

performance, and withstand high energy pulse in the

- 100% avalanche tested

- Improved dv/dt capability

avalanche and commutation mode.

- Improved dv/dt capability

These devices are well suited for AC/DC power conversion

TO-247

Absolute Maximum Ratings

TC = 25°C unless otherwise noted

Symbol

VDSS

Parameter

SLH60R042SS

Units

Drain-Source Voltage

Drain Current

600

- Continuous (TC = 25℃)

- Continuous (TC = 100℃)

(Note 1)

45*

IDM

VGSS

EAS

Drain Current - Pulsed

Gate-Source Voltage

226

±20

2890

Single Pulsed Avalanche Energy

Peak Diode Recovery dv/dt

(Note 2)

(Note 3)

V/ns

dv/dt

Power Dissipation (TC = 25℃)

355

W/℃

℃

- Derate above 25℃

2.86

TJ, TSTG

Operating and Storage Temperature Range

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

-55 to +150

℃

300

*Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

Value

Units

RθJC

RθJS

RθJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

0.35

0.5

℃/W

Maple Semiconductor CO.,LTD

http://www.maplesemi.com

Rev 1.0 September 2017

Page1

12 3 4 5 6

中文翻译

下载PDF

与SLH60R042SS相关器件

型号	品牌	获取价格	描述	数据表
SLH60R080SS	Maplesemi	获取价格	TO-247
SLH60R090E7	Maplesemi	获取价格	TO-247
SLH65R170E7	Maplesemi	获取价格	TO-247
S-LH8050PLT1G	LEIDITECH	获取价格	General Purpose Transistors NPN Silicon
S-LH8050PLT3G	LEIDITECH	获取价格	General Purpose Transistors NPN Silicon
S-LH8050PLTIG	LEIDITECH	获取价格	General Purpose Transistors NPN Silicon
S-LH8050QLT1G	LEIDITECH	获取价格	General Purpose Transistors NPN Silicon
S-LH8050QLT3G	LEIDITECH	获取价格	General Purpose Transistors NPN Silicon
SLH80R240GTI	Maplesemi	获取价格	TO-247
SLHG001-214	ROSENBERGER	获取价格	Pre-laced hoisting grip