Datasheet > SLF_P12N65C

SLF_P12N65C

更新时间： 2025-07-20 18:09:55

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
10页	1928K
描述
TO-220F&TO-220C

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SLF_P12N65C 数据手册

SLF12N65C/SLP12N65C

650V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using

advanced planar stripe DMOS technology.

- 12A, 650V, R_DS(on)= 0.75Ω@V_GS= 10 V

- Low gate charge ( typical 52 nC)

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge topology.

TO-220C

TO-220F

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLP12N65C

SLF12N65C

Units

Drain-Source Voltage

650

V_DSS

Drain Current

- Continuous (T_C= 25℃)

7.4

12 *

I_D

- Continuous (T_C= 100℃)

7.4 *

(Note 1)

I_DM

V_GSS

EAS

I_AR

Drain Current

- Pulsed

48 *

ꢀ

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

865

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25℃)

V/ns

dv/dt

4.5

230

ꢀ

P_D

- Derate above 25℃

1.85

0.43

W/℃

℃

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

300

Maximum lead temperature for soldering purposes,

T_L

℃

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_θJC

Parameter

SLP12N65C

0.54

SLF12N65C

Units

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

2.33

0.5

R_θJS

62.5

R_θJA

Msemitek Co., Ltd

http://www.msemitek.com

Rev. 1.1 October . 2019

12 3 4 5 6 7...10

中文翻译

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