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SLF_H80R180GT PDF预览

SLF_H80R180GT

更新时间: 2024-11-18 18:09:47
品牌 Logo 应用领域
美浦森 - Maplesemi /
页数 文件大小 规格书
9页 1467K
描述
TO-220F&TO-247

SLF_H80R180GT 数据手册

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SLF80R180GT/SLH80R180GT  
800V N-Channel Multi-EPI Super-JMOSFET  
General Description  
Features  
This Power MOSFET is produced using Msemitek‘s  
advanced Superjunction MOSFET technology.  
- 850V@Tj=150  
- 24A,800V, RDS(on) =145mΩ@VGS = 10 V  
- Low gate charge(typ. Qg =66.5nC)  
- High ruggedness  
- Ultra fast switching  
- 100% avalanche tested  
- Improved dv/dt capability  
This advanced technology has been especially tailored  
to minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switched mode power supplies.  
D
G
G
TO-247  
D
S
S
Absolute Maximum Ratings  
TC = 25°C unless otherwise noted  
Symbol  
Parameter  
SLF80R180GT/SLH80R180GT  
Units  
V
Drain-Source Voltage  
800  
24  
VDSS  
Drain Current * - Continuous (TC = 25)  
- Continuous (TC = 100)  
A
ID  
15  
A
(Note 1)  
(Note 2)  
IDM  
Drain Current * - Pulsed  
72  
A
VGSS  
Gate-Source Voltage  
30  
±
V
E
Single Pulsed Avalanche Energy  
Power Dissipation (TC = 25)  
- Derate above 25℃  
160  
mJ  
W
AS  
100  
0.8  
278  
2.6  
PD  
W/℃  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +150  
260  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
* Drain current limited by maximum junction temperature.  
Thermal Characteristics  
Symbol  
RθJC  
Parameter  
SLF80R180GT/SLH80R180GT  
Units  
/W  
/W  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
1.25  
62.5  
0.45  
62.5  
RθJA  
Msemitek Co., Ltd  
http://www.msemitek.com  
Rev1.2 Feb. 2023  

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