Datasheet > SLF_H60R065E7

SLF_H60R065E7

更新时间： 2024-11-18 18:09:51

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
9页	846K
描述
TO-220F&TO-263

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SLF_H60R065E7 数据手册

SLF60R065E7 / SLB60R065E7

600V N-Channel

Super-JMOSFET

General Description

Features

This Power MOSFET is produced using Msemitek‘s

advanced Superjunction MOSFET technology.

- 50A, 600V, R_DS(on)Typ=53mΩ@V_GS= 10 V

- Low gate charge(typ. Qg =75nC)

- Ultra high ruggedness

- Fast switching

- 100% avalanche tested

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies.

- Improved dv/dt capability

TO-220F

TO-263

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLF60R065E7 / SLB60R065E7

Units

Drain-Source Voltage

600

50*

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

27.2*

(Note 1)

I_DM

V_GSS

EAS

I_AR

Drain Current

- Pulsed

150*

ꢀ

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

281

6.6

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

MOSFET dv/dt

3.29

dv/dt

V/ns

100

Power Dissipation (T_C= 25℃)

329

W/℃

℃

P_D

- Derate above 25℃

0.38

2.63

T_J, T_STG

Operating and Storage Temperature Range

-55 to +150

260

Maximum lead temperature for soldering purposes,

T_L

℃

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_θJC

Parameter

SLF60R065E7 / SLB60R065E7

Units

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

2.6

0.38

R_θJS

62.5

R_θJA

Msemitek Co., Ltd

http://www.msemitek.com

Rev. 1.0 Oct . 2020

12 3 4 5 6 7...9

中文翻译

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