Datasheet > SLF70R600S2

SLF70R600S2

更新时间： 2024-11-18 18:09:43

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
6页	495K
描述
TO-220F

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SLF70R600S2 数据手册

SLP70R600S2/SLF70R600S2

700V N-channel MOSFET

General Description

This Power MOSFET is produced using Maple semi‘s

Features

- 7A, 700V, R_DS(on)typ= 0.52Ω@V_GS= 10 V

- Low gate charge ( typical 18nC)

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

Advanced Super-Junction technology.

This advanced technology has been especially tailored to

minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

These devices are well suited for AC/DC power conversion

in switching mode operation for higher efficiency.

LEAD FREE

RoHS

TO-220

TO-220F

G D S

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLP70R600S2 SLF70R600S2

Units

Drain-Source Voltage

700

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

4.4

(Note 1)

I_DM

V_GSS

EAS

I_AR

Drain Current

- Pulsed

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

400

dv/dt

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25℃)

V/ns

125

1.0

P_D

- Derate above 25℃

0.28

W/℃

℃

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

300

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

℃

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_θJC

Parameter

SLP70R600S2 SLF70R600S2

Units

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

1.0

3.57

R_θJS

62.5

R_θJA

Maple Semiconductor CO., LTD

http://www.meipusen.com

Rev1.0 Nov. 2018

12 3 4 5 6

中文翻译

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