Datasheet > SLF60R380S2

SLF60R380S2

更新时间： 2024-10-01 18:09:47

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
6页	1149K
描述
TO-220F

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中文翻译

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数据手册

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SLF60R380S2 数据手册

SLP60R380S2/SLF60R380S2

600V N-channel MOSFET

General Description

This Power MOSFET is produced using Maple semi‘s

Features

- 11A, 600V, R_DS(on)typ= 0.3Ω@V_GS= 10 V

- Low gate charge ( typical 22nC)

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

Advanced Super-Junction technology.

This advanced technology has been especially tailored to

minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

These devices are well suited for AC/DC power conversion

in switching mode operation for higher efficiency.

LEAD FREE

RoHS

TO-220

TO-220F

G D S

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLP60R380S2 SLF60R380S2

Units

Drain-Source Voltage

600

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

(Note 1)

I_DM

V_GSS

EAS

I_AR

Drain Current

- Pulsed

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

310

dv/dt

Peak Diode Recovery dv/dt

Power Dissipation (T_C= 25℃)

V/ns

P_D

- Derate above 25℃

0.75

0.28

W/℃

℃

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

300

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

℃

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_θJC

Parameter

SLP60R380S2 SLF60R380S2

Units

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

1.33

3.57

R_θJS

62.5

R_θJA

Maple Semiconductor CO., LTD

http://www.meipusen.com

Rev1.0 Nov. 2018

12 3 4 5 6

中文翻译

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