Datasheet > SLD_F5N50S2

SLD_F5N50S2

更新时间： 2024-11-18 18:09:43

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
9页	1355K
描述
TO-252&TO-220F

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SLD_F5N50S2 数据手册

SLD5N50S2 / SLF5N50S2

500V N-Channel MOSFET

General Description

Features

This Power MOSFET is produced using Msemitek‘s

advanced planar stripe DMOS technology.

- 5A, 500V, R_{DS(on) typ}= 1.3Ω@V_GS= 10V

- Low gate charge ( typical 11.6nC)

- High ruggedness

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction based on half bridge topology.

D-PAK

TO-220F

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLD5N50S2

SLF5N50S2

Units

Drain-Source Voltage

500

V_DSS

Drain Current * - Continuous (T_C= 25℃)

- Continuous (T_C= 100℃)

I_D

2.8

(Note 1)

(Note 2)

I_DM

Drain Current * - Pulsed

V_GSS

Gate-Source Voltage

±30

110

Single Pulsed Avalanche Energy

Power Dissipation (T_C= 25℃)

- Derate above 25℃

75.9

0.6

P_D

0.37

W/℃

℃

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

300

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

℃

Thermal Characteristics

Symbol

Parameter

SLD5N50S2

SLF5N50S2

2.7

Units

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink Typ.

Thermal Resistance, Junction-to-Ambient

1.65

0.50

62.5

R_θJC

0.50

R_θJS

100

℃/W

R_θJA

Msemitek Co., Ltd

http://www.msemitek.com

Rev.2.0 Jul. 2021

12 3 4 5 6 7...9

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