Datasheet > SLD80R830GT

SLD80R830GT

更新时间： 2024-10-15 18:10:07

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
8页	1040K
描述
TO-252

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SLD80R830GT 数据手册

SLD80R830GT

800V N-Channel Multi-EPI Super-JMOSFET

General Description

Features

This Power MOSFET is produced using Msemitek‘s

advanced Superjunction MOSFET technology.

- 850V@T_j=150℃

- 6A,800V, R_DS(on)=740mΩ@V_GS= 10 V

- Low gate charge(typ. Qg =17.7nC)

- High ruggedness

- Ultra fast switching

- 100% avalanche tested

- Improved dv/dt capability

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies.

D-PAK

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLD80R830GT

Units

Drain-Source Voltage

800

V_DSS

Drain Current * - Continuous (T_C= 25℃)

- Continuous (T_C= 100℃)

I_D

3.8

(Note 1)

(Note 2)

I_DM

Drain Current * - Pulsed

V_GSS

Gate-Source Voltage

Single Pulsed Avalanche Energy

Power Dissipation (T_C= 25℃)

- Derate above 25℃

125

1.0

P_D

W/℃

℃

T_J, T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

260

℃

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_θJC

Parameter

SLD80R830GT

Units

℃/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

1.0

R_θJA

Msemitek Co., Ltd

http://www.msemitek.com

Rev1.0 May. 2023

12 3 4 5 6 7 8

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