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SLD332F PDF预览

SLD332F

更新时间: 2024-10-14 06:11:55
品牌 Logo 应用领域
索尼 - SONY 二极管激光二极管
页数 文件大小 规格书
5页 84K
描述
1W High Power Laser Diode

SLD332F 技术参数

生命周期:Active包装说明:M-S035, 1 PIN
Reach Compliance Code:unknown风险等级:5.58
配置:SINGLE功能数量:1
最高工作温度:30 °C最低工作温度:-10 °C
光电设备类型:LASER DIODE标称输出功率:1.1 mW
峰值波长:805 nm半导体材料:AlGaAs
形状:RECTANGULAR子类别:Laser Diodes
最大阈值电流:500 mABase Number Matches:1

SLD332F 数据手册

 浏览型号SLD332F的Datasheet PDF文件第2页浏览型号SLD332F的Datasheet PDF文件第3页浏览型号SLD332F的Datasheet PDF文件第4页浏览型号SLD332F的Datasheet PDF文件第5页 
1W High Power Laser Diode  
SLD332F  
Description  
The SLD332F is a 1W high power laser diode designed to have a uniform emission area that is suitable for the  
applications for solid-state laser excitation, measurement, printing, etc.  
Features  
‹ High-power  
Recommended optical power output Po = 1W  
‹ High-optical power density: 1W/100μm (Emitting line width)  
Package  
M-S035  
Structure  
‹ AlGaAs quantum well structure laser diode  
Operating Lifetime  
‹ MTTF 10,000h (effective value) at Po = 1W, Tc = 25°C  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license  
by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating  
the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
E07606-CR  
- 1 -  

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