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SLD263-24A PDF预览

SLD263-24A

更新时间: 2024-11-26 15:18:51
品牌 Logo 应用领域
力特 - LITTELFUSE 电视
页数 文件大小 规格书
6页 707K
描述
The SLD263 uni-directional TVS diode series is housed in a TO-263 package with lead modifications.

SLD263-24A 数据手册

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TVS Diodes Datasheet  
SLD263 Uni-directional Series  
Surface Mount - 7000 W - TO-263  
RoHS Pb e3  
Description  
The SLD263 uni-directional TVS diode series is housed in a  
TO-263 package with lead modifications. It is designed to protect  
sensitive electronics against ESD, EFT, 10/1000 surge events and  
inductive load switching voltage transient events for severe  
automotive load dump applications.  
Features & Benefits  
UL recognized compound  
meeting flammability rating  
UL94 V-0  
AEC-Q101 qualified and PPAP  
capable  
Meet ISO7637-2 5a/5b  
protection, ISO16750 and  
JASO D-001 load dump test  
(refer to APP note for details)  
Meets MSL level 1, per  
J-STD-020, LF maximum  
peak of 260 °C  
Maximum Ratings and Thermal  
(T = 25 OC unless otherwise noted)  
Characteristics  
A
For surface mounted  
applications to optimize board  
space  
VBR @TJ = VBR@25 °C x (1+αT  
x (TJ - 25))(αT:temperature  
coefficient, typical value is 0.1  
%)  
Parameter  
Symbol  
Value  
1400  
7000  
9
Unit  
W
Peak Pulse Power Dissipation  
1. 10 ms/150 ms test waveform  
Low profile package  
PPPM  
Glass passivated chip junction  
in modifiedTO-263 package  
High temperature reflow  
soldering guaranteed: 260  
°C/10 sec at terminals  
2. 10 μs/1000 μs test waveform  
W
ESD protection of data lines  
in accordance with IEC  
61000-4-2, 30 kV(Air), 30 kV  
(Contact)  
Power Dissipation on Infinite  
Heatsink atTC = 25 °C  
PD  
VF  
W
Matte tin lead–free plated  
Halogen free and RoHS  
compliant  
Maximum Instantaneous Forward  
Voltage at 100 A for Un-idirectional  
Only  
1.8  
V
EFT protection of data lines in  
accordance with IEC 61000-  
4-4  
Pb-free E3 means 2nd level  
interconnect is pb-free and  
the terminal finish material is  
tin (Sn) (IPC/JEDEC J-STD-  
609A.01)  
Peak Forward Surge Current 8.3 m  
Single Half Sine-wave  
IFSM  
650  
A
°C  
Fast response time: typically  
less than 1.0 ps from 0 volts  
to VBR min  
Operating Junction and Storage  
Temperature Range  
TJ, TSTG -55 to 150  
Excellent clamping capability  
TypicalThermal Resistance Junction  
to Case  
RθJC  
1.3  
°C/W  
Low incremental surge  
resistance  
Applications  
Functional Diagram  
Designed to protect sensitive electronics from:  
Inductive load switching  
Alternator load dump  
© 2023 Littelfuse, Inc.  
Specifications are subject to change without notice.  
Revised: FW.11/24/23  

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