Datasheet > SLD237VL

SLD237VL

更新时间： 2024-11-24 22:50:19

品牌	Logo	应用领域
索尼 - SONY		二极管激光二极管
页数	文件大小	规格书
4页	48K
描述
Index-Guided High Power AlGaAs Laser Diode

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中文翻译

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技术参数
数据手册

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SLD237VL 技术参数

生命周期：	Active	包装说明：	M-274, 3 PIN
Reach Compliance Code：	unknown	风险等级：	5.61
配置：	SINGLE	最大正向电流：	0.13 A
最大正向电压：	2.3 V	安装特点：	THROUGH HOLE MOUNT
功能数量：	1	最高工作温度：	70 °C
最低工作温度：	-10 °C	光电设备类型：	LASER DIODE
标称输出功率：	80 mW	峰值波长：	784 nm
半导体材料：	AlGaAs	形状：	ROUND
尺寸：	1 mm	子类别：	Laser Diodes
表面贴装：	NO	最大阈值电流：	40 mA
Base Number Matches：	1

SLD237VL 数据手册

SLD237VL

Index-Guided High Power AlGaAs Laser Diode

For the availability of this product, please contact the sales office.

Description

M-274

The SLD237VL is a high-power, index-guided AlGaAs

laser diode.

Features

• High power

• Low current consumption

• Small astigmatism

• Small package (φ5.6mm)

Applications

Optical pickup for CD-R/RW

Structure

AlGaAs quantum well structured laser diode

Recommended Operating Optical Power Output

Absolute Maximum Ratings

80mW

• Optical power output

Pomax

mW (CW)

130 mW (Pulse)

Pulse width 200ns or less

Duty 50% or less

• Reverse voltage

V^R

°C

• Operating temperature Topr

–10 to +70

–40 to +85

(Pulse Operation)

• Storage temperature

Tstg

Connection Diagram

Pin Configuration

COMMON

1. LD anode

2. N.C.

3. COMMON

Bottom View

Sony reserves the right to change products and specifications without prior notice. This information does not convery any license by

any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the

operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.

– 1 –

E00852B19-PS

12 3 4

中文翻译

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