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SLD233VL PDF预览

SLD233VL

更新时间: 2024-01-25 01:42:20
品牌 Logo 应用领域
索尼 - SONY 二极管激光二极管
页数 文件大小 规格书
3页 50K
描述
Index-Guided High Power AlGaAs Laser Diode

SLD233VL 技术参数

生命周期:Obsolete包装说明:M-274, 3 PIN
Reach Compliance Code:unknown风险等级:5.82
其他特性:LOW NOISE配置:SINGLE WITH BUILT-IN PHOTO DIODE
最大正向电流:0.085 A最大正向电压:2.5 V
安装特点:THROUGH HOLE MOUNT功能数量:1
最高工作温度:60 °C最低工作温度:-10 °C
光电设备类型:LASER DIODE标称输出功率:30 mW
峰值波长:790 nm半导体材料:AlGaAs
形状:ROUND尺寸:1 mm
子类别:Laser Diodes表面贴装:NO
最大阈值电流:40 mABase Number Matches:1

SLD233VL 数据手册

 浏览型号SLD233VL的Datasheet PDF文件第2页浏览型号SLD233VL的Datasheet PDF文件第3页 
SLD233VL  
Index-Guided High Power AlGaAs Laser Diode  
Description  
M-274  
The SLD233VL is a high power index-guided AlGaAs  
laser diode.  
Features  
Low noise  
Low power consumption  
Applications  
Pickups for MiniDisc recording/playback  
Structure  
AlGaAs quantum well-structure laser diode  
PIN photodiode for optical power output monitor  
Recommended Operating Optical Power Output  
30mW  
Absolute Maximum Ratings (Tc = 25°C)  
Optical power output  
Reverse voltage  
PO  
35  
2
mW  
V
VR LD  
PD  
15  
V
Operating temperature Topr  
Storage temperature Tstg  
–10 to +60 °C  
–40 to +85 °C  
Pin Configuration  
Connection Diagram  
COMMON  
3
PD  
LD  
2
1
2
1
3
1. LD ANODE  
2. PD ANODE  
3. COMMON  
Bottom View  
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by  
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the  
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.  
– 1 –  
E97940-PS  

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